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Macroscopic Quantum Carrier Transport Modeling Read chapter Read first chapter

2001 | OriginalPaper | Chapter

A Unified Model of Dopant Diffusion in SiGe.

Authors : Ardechir Pakfar, A. Poncet, T. Schwartzmann, H. Jaouen

Published in: Simulation of Semiconductor Processes and Devices 2001

Publisher: Springer Vienna

Included in: Professional Book Archive

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The understanding of the effect of each physical mechanism driving dopant and point defect diffusion due to Ge leads to a unified formulation of diffusion for the usual dopants in SiGe material. The model calibration is deduced from a critical synthesis of the theoretical and experimental published studies.

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Metadata
Title
A Unified Model of Dopant Diffusion in SiGe.
Authors
Ardechir Pakfar
A. Poncet
T. Schwartzmann
H. Jaouen
Copyright Year
2001
Publisher
Springer Vienna
Book
Simulation of Semiconductor Processes and Devices 2001

Print ISBN: 978-3-7091-7278-0

Electronic ISBN: 978-3-7091-6244-6

Copyright Year: 2001

DOI
https://doi.org/10.1007/978-3-7091-6244-6_14