Skip to main content
Disciplines
Automotive Business IT + Informatics Construction + Real Estate Electrical Engineering + Electronics Energy + Sustainability Insurance + Risk Finance + Banking Management + Leadership Marketing + Sales Mechanical Engineering + Materials
Events
DE
EN
Books
Journals
Topic Page
Marketing
Start single access now
Access for companies
EXTENDED SEARCH
Log in
Top
Journal of Computational Electronics
Published in: Journal of Computational Electronics 2/2019

28-01-2019

An accurate and generic window function for nonlinear memristor models

Authors: Jeetendra Singh, Balwinder Raj

Published in: Journal of Computational Electronics | Issue 2/2019

Log in

Activate our intelligent search to find suitable subject content or patents.

search-config
loading …

Abstract

Memristors have become promising candidates for the advancement of recent technology as the miniaturization of complementary metal–oxide–semiconductor (CMOS) technology approaches its final stage. Nanoscale size, easy fabrication, compatibility with MOS, and diverse applications have accelerated these devices to new levels. In this paper, we discuss the merits and demerits of existing window functions and propose a novel window function that addresses their limitations. The suggested window function exhibits high nonlinearity at the boundaries and resolves other boundary issues. The results obtained using the proposed window function are compared with data reported in the literature to validate our design approach.
previous article 1 Tb/s all-optical XOR and AND gates using quantum-dot semiconductor optical amplifier-based turbo-switched Mach–Zehnder interferometer
next article Circular transmission resonances and magnetic field effects in a ring of quantum dots connected to external leads in the meta-configuration

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Wirtschaft"

Online-Abonnement

Mit Springer Professional "Wirtschaft" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 340 Zeitschriften

aus folgenden Fachgebieten:

  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Versicherung + Risiko




Jetzt Wissensvorsprung sichern!

inform now
Literature
1.
Chua, L.O.: Memristor-the missing circuit element. IEEE Trans. Circuit Theory 18(5), 507–519 (1971)CrossRef
2.
Widrow, B.: An Adaptive “ADALINE” Neuron Using Chemical “Memistors”. Stanford Electronics Laboratories Technical Report, No. 1553-2 (1960)
3.
4.
Strukov, D.B., Snider, G.S., Stewart, D.R., Williams, R.S.: The missing memristor found. Nature 453(7191), 80–83 (2008)CrossRef
5.
Yang, J.J., Pickett, M.D., Li, X., Ohlberg, D.A.A., Stewart, D.R., Williams, R.S.: Memristive switching mechanism for metal/oxide/metal nanodevices. Nat. Nanotechnol. 3(7), 429–433 (2008)CrossRef
6.
Lehtonen, E., Laiho, M.: BCNN using memristors for neighborhood connections. In: Proceedings of 12th International Workshop on Cellular Nanoscale Networks and Their Applications (2010)
7.
Yakopcic, C., Taha, T.M., Subramanyam, G., Pino, R.E., Rogers, S.: A memristor device model. IEEE Electron Device Lett. 32(10), 1436–1438 (2011)CrossRef
8.
Pickett, M.D., Strukov, D.B., Borghetti, J.L., Yang, J.J., Snider, G.S., Stewart, D.R., Williams, R.S.: Switching dynamics in titanium dioxide memristive devices. J. Appl. Phys. 106(7), 1–6 (2009)CrossRef
9.
Abdalla, H., Pickett, M.D.: SPICE modeling of memristors. In: 2011 IEEE International Symposium of Circuits and Systems (ISCAS) (2011)
10.
Biolek, Z., Biolek, D., Biolkova, V.: Spice model of memristor with nonlinear dopant drift. Radioengineering 18(2), 210–214 (2009)MATH
11.
Biolek, D., Di Ventra, M., Pershin, Y.V.: Reliable SPICE simulations of memristors, memcapacitors and meminductors. Radioengineering 22(4), 945–968 (2013)
12.
Vourkas, I., Batsos, A., ChSirakoulis, G.: SPICE modeling of nonlinear memristive behavior. Int. J. Circuit Theory Appl. 43(5), 553–565 (2015)CrossRef
13.
Pershin, Y.V., Di Ventra, M.: SPICE model of memristive devices with threshold. Radioengineering 22(2), 485–489 (2013)
14.
Benderli, S., Wey, T.A.: On SPICE macro modeling of TiO2 memristors. Electron. Lett. 45(7), 377–379 (2009)CrossRef
15.
Rák, Á., Cserey, G.: Macromodeling of the memristor in SPICE. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 29(4), 632–636 (2010)CrossRef
16.
Kvatinsky, S., Friedman, E.G., Kolodny, A., Weiser, U.C.: TEAM: threshold adaptive memristor model. IEEE Trans. Circuits Syst. I Regul. Pap. 60(1), 211–221 (2013)MathSciNetCrossRef
17.
Kvatinsky, S., Ramadan, M., Friedman, E.G., Kolodny, A.: VTEAM: a general model for voltage-controlled memristors. IEEE Trans. Circuits Syst. II Exp. Briefs 62(8), 786–790 (2015)CrossRef
18.
Strukov, D.B., Borghetti, J.L., Williams, R.S.: Coupled ionic and electronic transport model of thin-film semiconductor memristive behavior. Small 5(9), 1058–1063 (2009)CrossRef
19.
Waser, R., Dittimann, R., Staikov, G., Szot, K.: Redox-based resistive switching memories-nanoionic mechanisms, prospects and challenges. Adv. Mater. 21(25–26), 2632–2663 (2009)CrossRef
20.
Strukov, D.B., Williams, R.S.: Exponential ionic drift: fast switching and low volatility of thin-film memristors. Appl. Phys. A 94(3), 515–519 (2009)CrossRef
21.
Joglekar, Y.N., Wolf, S.J.: The elusive memristor: properties of basic electrical circuits. Eur. J. Phys. 30(4), 661 (2009)CrossRefMATH
22.
Prodromakis, T., Peh, B.P., Papavassiliou, C., Toumazou, C.: A versatile memristor model with nonlinear dopant kinetics. IEEE Trans. Electron Devices 58(9), 3099–3105 (2011)CrossRef
23.
Zha, J., Huang, H., Liu, Y.: A novel window function for memristor model with application in programming analog circuits. IEEE Trans. Circuits Syst. II Exp. Briefs 63(5), 423–427 (2016)CrossRef
24.
Blanc, J., Staebler, D.L.: Electrocoloration in SrTiO3: vacancy drift and oxidation–reduction of transition metals. Phys. Rev. B 4(10), 3548–3557 (1971)CrossRef
25.
Alvbrant, J., Keshmiri, V., Wikner, J.J.: Transfer characteristics and bandwidth limitation in a linear-drift memristor model. In: 2015 European Conference on Circuit Theory and Design (ECCTD), pp. 1–4. IEEE (2015)
26.
Butusov, D.N., Ostrovskii, V.Y., Zubarev, A.V.: Study of two-memristor circuit model with explicit composition method. In: 24th IEEE International Conference on Electronics, Circuits and Systems (ICECS), 2017, pp. 206–209. IEEE (2017)
Metadata
Title
An accurate and generic window function for nonlinear memristor models
Authors
Jeetendra Singh
Balwinder Raj
Publication date
28-01-2019
Publisher
Springer US
Published in
Journal of Computational Electronics / Issue 2/2019
Print ISSN: 1569-8025
Electronic ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-019-01306-6

Other articles of this Issue 2/2019

Journal of Computational Electronics 2/2019 Go to the issue

OriginalPaper

The impact of vacancy defects on the performance of a single-electron transistor with a carbon nanotube island

OriginalPaper

Theoretical investigation of the structural, electronic and thermodynamic properties of cubic and orthorhombic XZrS3 (X = Ba,Sr,Ca) compounds

OriginalPaper

A model for nonvolatile p-channel metal–ferroelectric–metal–insulator–semiconductor field-effect transistors (MFMIS FETs)

OriginalPaper

Modeling the Seebeck coefficient for organic materials with the Kubo–Greenwood integral and a Gaussian density of states

OriginalPaper

A TCAD device simulator for exotic materials and its application to a negative-capacitance FET

OriginalPaper

Comparative analysis of the quantum FinFET and trigate FinFET based on modeling and simulation