An Extensible Code for Correcting Multiple Cell Upset in Memory Arrays

As the microelectronics technology continuously advances to deep submicron scales, the occurrence of Multiple Cell Upset (MCU) induced by radiation in memory devices becomes more likely to happen. The implementation of a robust Error Correction Code (ECC) is a suitable solution. However, the more complex an ECC, the more delay, area usage and energy consumption. An ECC with an appropriate balance between error coverage and computational cost is essential for applications where fault tolerance is heavily needed, and the energy resources are scarce. This paper describes the conception, implementation, and evaluation of Column-Line-Code (CLC), a novel algorithm for the detection and correction of MCU in memory devices, which combines extended Hamming code and parity bits. Besides, this paper evaluates the variation of the 2D CLC schemes and proposes an additional operation to correct more MCU patterns called extended mode. We compared the implementation cost, reliability level, detection/correction rate and the mean time to failure among the CLC versions and other correction codes, proving the CLCs have high MCU correction efficacy with reduced area, power and delay costs.