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Measurement Techniques

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01-01-2013 | RADIO MEASUREMENTS

Analysis of a method of measuring the S-parameters of microwave transistors

Authors: Yu. V. Ryasnyi, M. S. Chashkov, A. V. Borisov

Published in: Measurement Techniques | Issue 10/2013

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Abstract

A method of measuring the S-parameters of microwave transistors with a double 12-pole reflectometer, consisting of three stages, is considered. Systems of measuring and calibration equations are formed at each stage. A method of calibrating the reflectometer is proposed, and expressions are obtained for determining the ratios of the generator voltage waves that occur in the system of equations.

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S. R. Mazumder and P. D. Van der Pulie, “Two-signal method of measuring the large-signal S-parameter of transistors,” IEEE Trans. Microwave Theory and Techn., MTT-26, No. 6, 417–420 (1978).ADSCrossRef

E. B. Toropov, “Measurement of the S-parameters of transistors in the large-signal mode,” Radiotekhnika, 36, No. 10, 63–65 (1981).

V. A. Sevryukov, I. V. Bezudov, and Yu. G. Tatsii, Patent No. 2361227 RF, “A method of measuring the S-parameters of microwave transistors in the linear mode,” Izobret., No. 15 (1996).

V. P. Petrov et al., “Analysis of methods of calibrating a 12-pole reflectometer,” Izmer. Tekhn., No. 10, 40–41 (1985); Measur. Techn., 28, No. 10, 878–881 (1985).CrossRef

Title: Analysis of a method of measuring the S-parameters of microwave transistors
Authors: Yu. V. Ryasnyi
M. S. Chashkov
A. V. Borisov
Publication date: 01-01-2013
Publisher: Springer US
Published in: Measurement Techniques / Issue 10/2013
Print ISSN: 0543-1972
Electronic ISSN: 1573-8906
DOI: https://doi.org/10.1007/s11018-012-0109-6

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