Skip to main content
Disciplines
Automotive Business IT + Informatics Construction + Real Estate Electrical Engineering + Electronics Energy + Sustainability Insurance + Risk Finance + Banking Management + Leadership Marketing + Sales Mechanical Engineering + Materials
Events
DE
EN
Books
Journals
Topic Page
Marketing
Start single access now
Access for companies
EXTENDED SEARCH
Log in
Top
Published in:
Macroscopic Quantum Carrier Transport Modeling Read chapter Read first chapter

2001 | OriginalPaper | Chapter

Analysis of Statistical Fluctuations due to Line Edge Roughness in sub-0.1μm MOSFETs

Authors : S. Kaya, A. R. Brown, A. Asenov, D. Magot, T. LintonI

Published in: Simulation of Semiconductor Processes and Devices 2001

Publisher: Springer Vienna

Included in: Professional Book Archive

Get Access

Activate our intelligent search to find suitable subject content or patents.

search-config
loading …

We present a full-3D statistical analysis of line edge roughness (LER) in sub-0.1 μm MOSFETs. The modelling approach for line edges and the parameters used in the analysis take into account the statistical nature of the roughness. The results indicate that intrinsic fluctuations in MOSFETs due to LER become comparable in size to random dopant effects and can seriously inhibit scaling below 50 nm.

previous chapter Dynamics of p+ polysilicon gate depletion due to the formation of boron compounds in TiSi2
next chapter Quantum Corrections in 3-D Drift Diffusion Simulations of Decanano MOSFETs Using an Effective Potential
Metadata
Title
Analysis of Statistical Fluctuations due to Line Edge Roughness in sub-0.1μm MOSFETs
Authors
S. Kaya
A. R. Brown
A. Asenov
D. Magot
T. LintonI
Copyright Year
2001
Publisher
Springer Vienna
Book
Simulation of Semiconductor Processes and Devices 2001

Print ISBN: 978-3-7091-7278-0

Electronic ISBN: 978-3-7091-6244-6

Copyright Year: 2001

DOI
https://doi.org/10.1007/978-3-7091-6244-6_18