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Journal of Computational Electronics

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13-04-2018

Analytical modeling of 2DEG and 2DHG charge balancing in quaternary \(\hbox {Al}_{0.42}\hbox {In}_{0.03}\hbox {Ga}_{0.55}\hbox {N/Al}_{0.3}\hbox {In}_{0.7}\hbox {N}\) HEMTs

Published in: Journal of Computational Electronics | Issue 3/2018

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Abstract

A two-dimensional analytical model considering the polarization-induced charges and defect-induced traps at all interfaces of the AlInGaN/AlInN High Electron Mobility Transistor (HEMT) device structure has been developed. The charge-balancing concept based on a two-dimensional hole gas (2DHG) on top of a two-dimensional electron gas (2DEG) improves the dynamic device behavior. The 2DHG is generated by negative polarization and the 2DEG by positive polarization. Once the 2DHG appears, it prevents further depletion of the 2DEG. This dependence of the 2DEG density on the 2DHG confines the quantum well near the Fermi level. The dependence of the variation of the electron density in the quantum well for the 2DEG and 2DHG is studied using the analytical model to improve the carrier concentration.

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Title: Analytical modeling of 2DEG and 2DHG charge balancing in quaternary HEMTs
Publication date: 13-04-2018
Published in: Journal of Computational Electronics / Issue 3/2018
Print ISSN: 1569-8025
Electronic ISSN: 1572-8137
DOI: https://doi.org/10.1007/s10825-018-1164-2

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