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Fundamentals of Sputtering Read chapter Read first chapter

1984 | OriginalPaper | Chapter

Application of Computer-Controlled SIMS to Depth Profiling of Impurities Implanted in Silicon with High Dose of B+or BF2 + Ions

Authors : T. Tanigaki, S. Kawado, K. Nishiyama

Published in: Secondary Ion Mass Spectrometry SIMS IV

Publisher: Springer Berlin Heidelberg

Included in: Professional Book Archive

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Recently, TANIGAKI and co-workers have developed an electronic data processing system for an ion microprobe mass analyzer (ARL-IMMA) interfaced with a personal computer, that is to say an “automatic depth profiler” [1]. In this system, conversion of secondary ion intensity to atomic concentration and of sputtering time to depth scale can be easily carried out by setting two main parameters, viz. the measured conversion coefficient and the sputtering rate.

previous chapter Comparison of Oxygen and Indium Primary Ion Beams for SIMS-Depth Profiling
next chapter Improvements in the Routine Depth Profiling of Doping Elements
Metadata
Title
Application of Computer-Controlled SIMS to Depth Profiling of Impurities Implanted in Silicon with High Dose of B+or BF2 + Ions
Authors
T. Tanigaki
S. Kawado
K. Nishiyama
Copyright Year
1984
Publisher
Springer Berlin Heidelberg
Book
Secondary Ion Mass Spectrometry SIMS IV

Print ISBN: 978-3-642-82258-2

Electronic ISBN: 978-3-642-82256-8

Copyright Year: 1984

DOI
https://doi.org/10.1007/978-3-642-82256-8_81