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Fundamentals of Sputtering Read chapter Read first chapter

1984 | OriginalPaper | Chapter

Improvements in the Routine Depth Profiling of Doping Elements

Authors : R. v. Criegern, I. Weitzel, J. Fottner

Published in: Secondary Ion Mass Spectrometry SIMS IV

Publisher: Springer Berlin Heidelberg

Included in: Professional Book Archive

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In the SIMS depth profiling of doping elements, crater-edge and surrounding influences may still limit the dynamic range [1] , despite the impressing progress that has been achieved in the past [2,3] . In addition, profile deviations may sometimes be caused by residual contamination spots in the crater area.

previous chapter Application of Computer-Controlled SIMS to Depth Profiling of Impurities Implanted in Silicon with High Dose of B+or BF2 + Ions
next chapter Aspects of SIMS Evaluation of Tracer Diffusion and Its Isotope Effect
Metadata
Title
Improvements in the Routine Depth Profiling of Doping Elements
Authors
R. v. Criegern
I. Weitzel
J. Fottner
Copyright Year
1984
Publisher
Springer Berlin Heidelberg
Book
Secondary Ion Mass Spectrometry SIMS IV

Print ISBN: 978-3-642-82258-2

Electronic ISBN: 978-3-642-82256-8

Copyright Year: 1984

DOI
https://doi.org/10.1007/978-3-642-82256-8_82