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Journal of Computational Electronics

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24-11-2016

Application of generalized logistic functions in surface-potential-based MOSFET modeling

Authors: Tijana Kevkić, Vladica Stojanović, Dušan Joksimović

Published in: Journal of Computational Electronics | Issue 1/2017

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Abstract

An improved surface-potential-based metal–oxide–semiconductor field-effect transistor (MOSFET) model is presented. The improvement consists in introducing a new generalized logistic functional form for the smoothing factor that allows for a continuous transition of the surface potential from the depletion to strong inversion region. This functional form takes into account specific changes in the technological characteristics of MOSFET devices. The model combines the advantages of both regional and single-piece models and satisfies all requirements for compact models, i.e., continuity, accuracy, scalability, and simulation performance. Comparison with numerical data shows that the model provides an accurate description of the surface potential for a wide range of substrate doping and oxide thickness.

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Title: Application of generalized logistic functions in surface-potential-based MOSFET modeling
Authors: Tijana Kevkić
Vladica Stojanović
Dušan Joksimović
Publication date: 24-11-2016
Publisher: Springer US
Published in: Journal of Computational Electronics / Issue 1/2017
Print ISSN: 1569-8025
Electronic ISSN: 1572-8137
DOI: https://doi.org/10.1007/s10825-016-0935-x

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