Issue 1/2017
Content (25 Articles)
Structural stability, electronic structure, and novel transport properties with high thermoelectric performances of ZrIrX (X As, Bi, and Sb)
Yassine Benallou, Kadda Amara, Bendouma Doumi, Omar Arbouche, Mostefa Zemouli, B. Bekki, Allel Mokaddem
Self-energy of cold atoms in a long-range disordered optical potential
A. Yedjour, S. Bahlouli, B. Doumi, A. Mokaddem, A. I. Khachai, F. Hamdache
Group III–V ternary compound semiconductor materials for unipolar conduction in tunnel field-effect transistors
Bhagwan Ram Raad, Dheeraj Sharma, Kaushal Nigam, Pravin Kondekar
Heterogate junctionless tunnel field-effect transistor: future of low-power devices
Shiromani Balmukund Rahi, Pranav Asthana, Shoubhik Gupta
Double aperture double-gate vertical high-electron-mobility transistor
Ball Mukund Mani Tripathi, Shyama Prasad Das
Modeling gate-all-around Si/SiGe MOSFETs and circuits for digital applications
Subindu Kumar, Amrita Kumari, Mukul Kumar Das
Gate and drain SEU sensitivity of sub-20-nm FinFET- and Junctionless FinFET-based 6T-SRAM circuits by 3D TCAD simulation
S. Nilamani, V. N. Ramakrishnan
Simulation-based performance analysis of an ultra-low specific on-resistance trench SOI LDMOS with a floating vertical field plate
Kun Cheng, Shengdong Hu, Yuyu Jiang, Qi Yuan, Dong Yang, Ye Huang, Jianmei Lei, Zhi Lin, Xichuan Zhou, Fang Tang
Application of generalized logistic functions in surface-potential-based MOSFET modeling
Tijana Kevkić, Vladica Stojanović, Dušan Joksimović
A modified nanoelectronic spiking neuron model
Beatriz dos Santos Pês, Janaina Gonçalves Guimarães, Marlio José do Couto Bonfim
Design and performance analysis of a CNFET-based TCAM cell with dual-chirality selection
Divya Sethi, Manjit Kaur, Gurmohan Singh
A GMR device based on a magnetic nanostructure with a -doping
Xu-Hui Liu, Zheng-Hua Tang, Yong-Hong Kong, Xi Fu, Yan-Jun Gong
A simulation study of voltage-assisted low-energy switching of a perpendicular anisotropy ferromagnet on a topological insulator
Bahniman Ghosh, Rik Dey, Leonard F. Register, Sanjay K. Banerjee
Computational study of transport properties of graphene upon adsorption of an amino acid: importance of including – and –COOH groups
S. J. Rodríguez, L. Makinistian, E. Albanesi
Modeling the performance characteristics of ZnO-based heterojunction photodetectors
Mahdi Zavvari, Shima Mohammadi, Amir Yusefli
Design of plasmonic half-adder and half-subtractor circuits employing nonlinear effect in Mach–Zehnder interferometer
Santosh Kumar, Lokendra Singh, Sanjeev Kumar Raghuwanshi
Accuracy balancing for the finite-difference-based solution of the discrete Wigner transport equation
Kyoung-Youm Kim, Saehwa Kim, Ting-wei Tang
A multi-objective synthesis methodology for majority/minority logic networks
Moein Sarvaghad-Moghaddam, Ali A. Orouji, Monireh Houshmand
Analytical model for 4H-SiC superjunction drift layer with anisotropic properties for ultrahigh-voltage applications
Alok Naugarhiya, Pankaj Wakhradkar, Pravin N. Kondekar, Ganesh C. Patil, Rajendra M. Patrikar
Electromechanical modeling of stretchable interconnects
Ziming Dong, Baoxing Duan, Zhen Cao, Yintang Yang