Advertisement
Published in:
2001 | OriginalPaper | Chapter
Atomistic simulations of extrinsic defects evolution and transient enhanced diffusion in silicon
Authors : F. Cristiano, B. Colombeau, C. Bonafos, J. Aussoleil, G. Ben Assayag, A. Claverie
Published in: Simulation of Semiconductor Processes and Devices 2001
Publisher: Springer Vienna
Included in: Professional Book Archive
Activate our intelligent search to find suitable subject content or patents.
Select sections of text to find matching patents with Artificial Intelligence. powered by
Select sections of text to find additional relevant content using AI-assisted search. powered by
We present a “unified” model for the simulation of boron transient enhanced diffusion in both crystalline and preamorphised structures. The model describes the thermal evolution of a supersaturation of Si interstitial atoms in dynamical equilibrium with all types of extrinsic defects. We show some successful applications of our model to a variety of experimental conditions and give an example of its predictive capabilities at ultra low implantion energies.