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Journal of Computational Electronics
Published in: Journal of Computational Electronics 4/2013

01-12-2013

Benchmarking of GFET devices for amplifier application using multiscale simulation approach

Authors: Sebastien Fregonese, Manuel Potereau, Nathalie Deltimple, Cristell Maneux, Thomas Zimmer

Published in: Journal of Computational Electronics | Issue 4/2013

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Abstract

Starting from advanced NEGF physical simulation of a 100 nm gate length Graphene FET, we attempt to use these results as a starting point to evaluate this technology for microwave circuit benchmarking. Using an improved compact model carefully adjusted on NEGF simulation data, in both DC and AC regime, we use this model to design a mmW amplifier at 140 GHz. In the first part of the design procedure, we use the ADS compact model for coplanar waveguide of passive elements. The complete design is then verified using electromagnetic FEM simulation which gives more reliable results at very high frequencies for passive elements and interconnections. This analysis has shown that unlike first GFET generations, impedance matching problems may be naturally solved with transistor performance improvements. Finally, the GFET device and circuit is compared to HEMT technologies and shows promising performances.
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Metadata
Title
Benchmarking of GFET devices for amplifier application using multiscale simulation approach
Authors
Sebastien Fregonese
Manuel Potereau
Nathalie Deltimple
Cristell Maneux
Thomas Zimmer
Publication date
01-12-2013
Publisher
Springer US
Published in
Journal of Computational Electronics / Issue 4/2013
Print ISSN: 1569-8025
Electronic ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-013-0525-0

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