Ausgabe 4/2013
Special Issue on Multiscale and Multiphysics Modeling
Inhalt (30 Artikel)
Negative differential resistance in graphene-nanoribbon–carbon-nanotube crossbars: a first-principles multiterminal quantum transport study
Kamal K. Saha, Branislav K. Nikolić
Coupling atomistic and continuous media models for electronic device simulation
Matthias Auf der Maur, Alessandro Pecchia, Gabriele Penazzi, Fabio Sacconi, Aldo Di Carlo
EMC/FDTD/MD simulation of carrier transport and electrodynamics in two-dimensional electron systems
N. Sule, K. J. Willis, S. C. Hagness, I. Knezevic
Advanced electro-optical simulation of nanowire-based solar cells
Mauro Zanuccoli, Igor Semenihin, Jérôme Michallon, Enrico Sangiorgi, Claudio Fiegna
Investigation of the RTN amplitude statistics of nanoscale MOS devices by the statistical impedance field method
Giulio Torrente, Niccolò Castellani, Andrea Ghetti, Christian Monzio Compagnoni, Andrea L. Lacaita, Alessandro S. Spinelli, Augusto Benvenuti
Efficient and realistic device modeling from atomic detail to the nanoscale
J. E. Fonseca, T. Kubis, M. Povolotskyi, B. Novakovic, A. Ajoy, G. Hegde, H. Ilatikhameneh, Z. Jiang, P. Sengupta, Y. Tan, G. Klimeck
Atomistic calculations of the electronic, thermal, and thermoelectric properties of ultra-thin Si layers
Neophytos Neophytou, Hossein Karamitaheri, Hans Kosina
From atoms to product reliability: toward a generalized multiscale simulation approach
Louis Gerrer, Sanliang Ling, Salvatore Maria Amoroso, Plamen Asenov, Alexandre L. Shluger, Asen Asenov
3D Monte Carlo simulation of FinFET and FDSOI devices with accurate quantum correction
F. M. Bufler, L. Smith
A simulation framework for modeling charge transport and degradation in high-k stacks
Luca Larcher, Andrea Padovani, Luca Vandelli
Multilevel modeling for charge transport in Ovonic chalcogenide materials and devices
M. Rudan, F. Giovanardi, E. Piccinini, F. Buscemi, R. Brunetti, A. Cappelli, G. Marcolini, C. Jacoboni
Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility
O. Nier, D. Rideau, Y. M. Niquet, F. Monsieur, V. H. Nguyen, F. Triozon, A. Cros, R. Clerc, J. C. Barbé, P. Palestri, D. Esseni, I. Duchemin, L. Smith, L. Silvestri, F. Nallet, C. Tavernier, H. Jaouen, L. Selmi
Comparison of electron and phonon transport in disordered semiconductor carbon nanotubes
H. Sevinçli, T. Lehmann, D. A. Ryndyk, G. Cuniberti
Benchmarking of GFET devices for amplifier application using multiscale simulation approach
Sebastien Fregonese, Manuel Potereau, Nathalie Deltimple, Cristell Maneux, Thomas Zimmer
VSP—a quantum-electronic simulation framework
Oskar Baumgartner, Zlatan Stanojevic, Klaus Schnass, Markus Karner, Hans Kosina
Multiscale modeling of screening effects on conductivity of graphene in weakly bonded graphene-dielectric heterostructures
Neerav Kharche, Timothy B. Boykin, Saroj K. Nayak
Self-consistent time-dependent boundary conditions for static and dynamic simulations of small electron devices
G. Albareda, A. Benali, X. Oriols
ANN modeling for design of a matched low noise pHEMT amplifier for mobile application
P. K. Chopra, M. G. Chandrasekhar
A constant recursive convolution technique for frequency dependent scalar wave equation based FDTD algorithm
M. Burak Özakın, Serkan Aksoy
Junctionless MOSFETs with laterally graded-doping channel for analog/RF applications
Yongbo Chen, Mohamed Mohamed, Michael Jo, Umberto Ravaioli, Ruimin Xu
Static and dynamic analysis of organic and hybrid inverter circuits
Brijesh Kumar, B. K. Kaushik, Y. S. Negi
Modeling of Cu-linked rectification devices by varying torsion angles
Sweta Parashar, Pankaj Srivastava, Manisha Pattanaik
Performance estimation of sub-30 nm junctionless tunnel FET (JLTFET)
Punyasloka Bal, M. W. Akram, Partha Mondal, Bahniman Ghosh
Computational predictive models for organic semiconductors
R. Sajeev, R. S. Athira, M. Nufail, K. R. Jinu Raj, M. Rakhila, Sreejith M. Nair, U. C. Abdul Jaleel, Andrew Titus Manuel
Influence of distance between adjacent tubes on SWCNT bundle interconnect delay and power dissipation
Mayank Kumar Rai, Sankar Sarkar
Thermal model of MOSFET with SELBOX structure
M. R. Narayanan, Hasan Al-Nashash, Dipankar Pal, Mahesh Chandra