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Journal of Computational Electronics

Ausgabe 4/2023

Inhalt (26 Artikel)

First principles investigation of transition metal hydrides LiXH3 (X = Ti, Mn, and Cu) for hydrogen storage

Syed Farhan Ali Shah, G. Murtaza, Khawar Ismail, Hafiz Hamid Raza, Imran Javed Khan

A high-performance doping-less tunnel FET with pocketed architecture: proposal and analysis

Nazia Haneef, Mohd Adil Raushan, Md Yasir Bashir, Mohammad Jawaid Siddiqui

Transition metal induced-magnetization in zigzag SiCNTs

Anurag Chauhan, Kapil Sharma, Sudhanshu Choudhary

Mg2Si heterostructure-based SOI TFET with steep subthreshold swing and high current drivability

Sukanta Kumar Swain, Sangita Kumari Swain, Shashi Kant Sharma

A novel design of graphene field-effect transistor-based out-phasing power amplifier

Mohsen Pooya, Mohammad Bagher Tavakoli, Farbod Setoudeh, Ashkan Horri, Ali Safari

Open Access

Microwave coplanar band-stop filters based on electric-LC resonators: systematic numerical approach and experimental validation

Martino Aldrigo, Leonardo Zappelli, Alina Cismaru, Mircea Dragoman, Sergiu Iordanescu, Damir Mladenovic, Catalin Parvulescu, C. H. Joseph, Davide Mencarelli, Luca Pierantoni, Paola Russo

Open Access Correction

Correction to: Microwave coplanar band-stop filters based on electric-LC resonators: systematic numerical approach and experimental validation

Martino Aldrigo, Leonardo Zappelli, Alina Cismaru, Mircea Dragoman, Sergiu Iordanescu, Damir Mladenovic, Catalin Parvulescu, C. H. Joseph, Davide Mencarelli, Luca Pierantoni, Paola Russo

Analytical modelling, simulation and comparative study of multi-junction (GaInP2/InGaAs/Ge) solar cell efficiency

Athil S. Al-Ezzi, M. N. M. Ansari, Syed K. Ahmed, Nadia M. L. Tan, Noor Afeefah Nordin, Saifuddin M. Nomanbhay

Optimization of ultra-thin CIGS-based solar cells by strained In1−xGaxAs absorption layer: 1D SCAPS modeling

A. Tarbi, T. Chtouki, M. A. Sellam, A. Benahmed, Y. El Kouari, H. Erguig, A. Migalska-Zalas, I. Goncharova, S. Taboukhat

Theoretical analysis of relative intensity noise in semiconductor QD lasers

Gholaam-Reza Babaabasi, Ali Mir, Mohammad-Hasan Yavari

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