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Journal of Computational Electronics
Erschienen in: Journal of Computational Electronics 4/2013

01.12.2013

Comparison of electron and phonon transport in disordered semiconductor carbon nanotubes

verfasst von: H. Sevinçli, T. Lehmann, D. A. Ryndyk, G. Cuniberti

Erschienen in: Journal of Computational Electronics | Ausgabe 4/2013

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Abstract

Charge and thermal conductivities are the most important parameters of carbon nanomaterials as candidates for future electronics. In this paper we address the effects of Anderson type disorder in long semiconductor carbon nanotubes (CNTs) to electron charge conductivity and lattice thermal conductivity using the atomistic Green function approach. The electron and phonon transmissions are analyzed as a function of the length of the disordered nanostructures. The thermal conductance as a function of temperature is calculated for different lengths. Analysis of the transmission probabilities as a function of length of the disordered device shows that both electrons and phonons with different energies display different transport regimes, i.e. quasi-ballistic, diffusive and localization regimes coexist. In the light of the results we discuss heating of the semiconductor device in electronic applications.
Vorheriger Artikel Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility
Nächster Artikel Benchmarking of GFET devices for amplifier application using multiscale simulation approach

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Metadaten
Titel
Comparison of electron and phonon transport in disordered semiconductor carbon nanotubes
verfasst von
H. Sevinçli
T. Lehmann
D. A. Ryndyk
G. Cuniberti
Publikationsdatum
01.12.2013
Verlag
Springer US
Erschienen in
Journal of Computational Electronics / Ausgabe 4/2013
Print ISSN: 1569-8025
Elektronische ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-013-0539-7

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