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Published in:
2001 | OriginalPaper | Chapter
Bipolar Transistor’s Intrinsic and Extrinsic Capacitance Determination
Authors : B. Ardouin, T. Zimmer, H. Mnif, P. Fouillat, D. Berger, D. Céli
Published in: Simulation of Semiconductor Processes and Devices 2001
Publisher: Springer Vienna
Included in: Professional Book Archive
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We present a new method to determine the intrinsic and extrinsic base-emitter and base-collector junction capacitances parameters of bipolar transistors as a function of junction bias. The capacitance specific compact model parameters (pp, V,y) can be extracted for the intrinsic as well as for extrinsic part. The results can be introduced in recent compact bipolar models.