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Semiconductors
Published in: Semiconductors 13/2023

01-12-2023

Broadband Superluminescent Diodes Based on Multiple InGaAs/GaAs Quantum Well-Dot Layers

Authors: M. V. Maximov, Yu. M. Shernyakov, G. O. Kornyshov, O. I. Simchuk, N. Yu. Gordeev, A. A. Beckman, A. S. Payusov, S. A. Mintairov, N. A. Kalyuzhnyy, M. M. Kulagina, A. E. Zhukov

Published in: Semiconductors | Issue 13/2023

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Abstract

We have studied superluminescent diodes with simplified design and active region based on 5 or 7 layers of InGaAs/GaAs quantum well-dots (QWDs). Emission peaks of the individual QWD layers are shifted with respect to each other by 15–35 nm to provide as wide as possible emission line in a superluminescent mode with central wavelength of about 1 μm without significant spectral dips. For superluminescent diodes with the active region based on 5 and 7 QWD layers, the maximal value of full width at half maximum of emission spectrum was 92 and 103 nm respectively.
previous article Manifestation of Dipole-Dipole and Quadrupole Interactions in the Correlator Spectrum of Optically Cooled Nuclear Spins of a Bulk n-Gaas Sample
next article InGaAsP/InP Photovoltaic Converters for Narrowband Radiation

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Metadata
Title
Broadband Superluminescent Diodes Based on Multiple InGaAs/GaAs Quantum Well-Dot Layers
Authors
M. V. Maximov
Yu. M. Shernyakov
G. O. Kornyshov
O. I. Simchuk
N. Yu. Gordeev
A. A. Beckman
A. S. Payusov
S. A. Mintairov
N. A. Kalyuzhnyy
M. M. Kulagina
A. E. Zhukov
Publication date
01-12-2023
Publisher
Pleiades Publishing
Published in
Semiconductors / Issue 13/2023
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782623030120

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