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Semiconductors
Published in: Semiconductors 13/2023

01-12-2023

On Heating Mechanisms in LEDs Based on p-InAsSbP/n-InAs(Sb)

Authors: A. L. Zakgeim, S. A. Karandashev, A. A. Klimov, R. E. Kunkov, T. S. Lukhmyrina, B. A. Matveev, M. A. Remennyi, A. A. Usikova, A. E. Chernyakov

Published in: Semiconductors | Issue 13/2023

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Abstract

Three main reasons for a temperature increase in activated p-InAsSbP/n-InAs/n-InAsSbP and p-InAsSbP/n-InAsSb/n-InAs double heterostructures has been considered, contribution of nonradiative Auger recombination, electron-phonon interaction and Joule heating to diode temperature increase in single element LEDs and flip-chip diode arrays (1 × 3) were evaluated at forward and reverse bias using data on spatial distribution of the mid-IR radiation intensity and current-voltage characteristics.
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Footnotes
1
Other terms similar in meaning and used in the literature—“optical insulator”, “microoptopair”.
 
2
Electrical contacts are rarely ideal, so they can also absorb some of the EL radiation.
 
3
Ratio (3) doesn’t not take into account the temperature dependence of the radiation-extraction efficiency γ and injection efficiency.
 
4
In most cases known from the literature the values of \(\xi _{{300\,\,{\text{K}}}}^{{77\,\,{\text{K}}}}\) for InAs-based LEDs are in the range from 10 to 30 (see, for example, [36]).
 
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Metadata
Title
On Heating Mechanisms in LEDs Based on p-InAsSbP/n-InAs(Sb)
Authors
A. L. Zakgeim
S. A. Karandashev
A. A. Klimov
R. E. Kunkov
T. S. Lukhmyrina
B. A. Matveev
M. A. Remennyi
A. A. Usikova
A. E. Chernyakov
Publication date
01-12-2023
Publisher
Pleiades Publishing
Published in
Semiconductors / Issue 13/2023
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782623030193

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