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Journal of Electronic Materials
Published in: Journal of Electronic Materials 8/2023

16-03-2023 | Topical Collection: 19th Conference on Defects (DRIP XIX)

Cathodoluminescence Study of 3C-SiC Epilayers Grown on 4H-SiC Substrates

Authors: Jun Chen, Hiroyuki Sazawa, Wei Yi, Takashi Sekiguchi

Published in: Journal of Electronic Materials | Issue 8/2023

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Abstract

3C-SiC/4H-SiC heterostructures have great potential for high-electron-mobility transistors. The growth of high-quality 3C-SiC epilayers on 4H-SiC substrates can be realized by controlling step growth with proper surface pretreatment. We investigated the optical and electrical properties of extended defects in 3C-SiC by cathodoluminescence (CL) spectroscopy. CL images revealed the distribution of extended defects in 3C-SiC. The impact of surface pretreatment on the growth of high-quality 3C-SiC is discussed.
previous article Trench-Filling Epitaxy of Germanium on (001) Silicon Enhanced Using [100]-Oriented Patterns
next article Contribution of 90° Si-Core Partial Dislocation to Asymmetric Double-Rhombic Single Shockley-Type Stacking Faults in 4H-SiC Epitaxial Layers

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Metadata
Title
Cathodoluminescence Study of 3C-SiC Epilayers Grown on 4H-SiC Substrates
Authors
Jun Chen
Hiroyuki Sazawa
Wei Yi
Takashi Sekiguchi
Publication date
16-03-2023
Publisher
Springer US
Published in
Journal of Electronic Materials / Issue 8/2023
Print ISSN: 0361-5235
Electronic ISSN: 1543-186X
DOI
https://doi.org/10.1007/s11664-023-10336-7

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