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Journal of Electronic Materials
Published in: Journal of Electronic Materials 8/2023

29-03-2023 | Topical Collection: 19th Conference on Defects (DRIP XIX)

Contribution of 90° Si-Core Partial Dislocation to Asymmetric Double-Rhombic Single Shockley-Type Stacking Faults in 4H-SiC Epitaxial Layers

Authors: Johji Nishio, Chiharu Ota, Ryosuke Iijima

Published in: Journal of Electronic Materials | Issue 8/2023

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Abstract

The expanding shapes of the double-rhombic single Shockley-type stacking faults (DRSFs) from half-loop array (HLA)-type basal plane dislocations (BPDs) and non-HLA-type BPDs were investigated by combining photoluminescence imaging and ultraviolet light illumination. The expansion rate of HLA-type DRSFs was found to increase rapidly after coalescence between neighboring DRSFs. It is thought that the 90° silicon-core [Si(g)] partial dislocation (PD) was a candidate for an expanding front that contributes to extremely rapid expansion of DRSFs. This might be one of the first reports on experimental observations of expanding 90° Si(g) PDs. The 90° Si(g) PDs also seemed to correlate to the symmetry of DRSF shapes for both HLA-type and non-HLA-type DRSFs, and the possibility of every intermediate symmetry was considered by introducing a proportion factor which is defined by combining two running BPD line directions at the origin within the same Burgers vector and glide type.
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Metadata
Title
Contribution of 90° Si-Core Partial Dislocation to Asymmetric Double-Rhombic Single Shockley-Type Stacking Faults in 4H-SiC Epitaxial Layers
Authors
Johji Nishio
Chiharu Ota
Ryosuke Iijima
Publication date
29-03-2023
Publisher
Springer US
Published in
Journal of Electronic Materials / Issue 8/2023
Print ISSN: 0361-5235
Electronic ISSN: 1543-186X
DOI
https://doi.org/10.1007/s11664-023-10343-8

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