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Journal of Materials Science: Materials in Electronics

Published in:

20-02-2021

Characteristic of As₃Se₄-based ovonic threshold switching device

Authors: Zhenhui Yuan, Xiaodan Li, Hao Wang, Yuan Xue, Sannian Song, Zhitang Song, Shuaishuai Zhu, Gang Han, Bingjun Yang, Takehito Jimbo, Koukou Suu

Published in: Journal of Materials Science: Materials in Electronics | Issue 6/2021

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Abstract

Ovonic threshold switching (OTS) selector has gained lots of attention due to its potential for realization of large density 3-dimensional (3D) stacking memory. In this letter, binary OTS material As₃Se₄ has been demonstrated with excellent performance. The OTS material showed outstanding selector performance such as large on-state current (5 mA) and low off-state current (~ 1nA), resulting in a large selectivity of 10⁶. The device endurance can reach 2 × 10⁶ times. The ON/OFF switching speed is 12/150 ns, respectively. The bandgap of the amorphous As₃Se₄ is about 1.55 eV. Combining the X-ray photoelectron spectroscopy and Raman results we found that the main structure motifs are AsSe₃ pyramidal and As₄Se₃ in the amorphous As₃Se₄ film. The As₃Se₄ can be used as a base material for OTS device.

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K. DerChang, S. Tang, I.V. Karpov, et al. In: 2009 IEEE International Electron Devices Meeting (IEDM) (2009)

M. Zhu, K. Ren, Z. Song, MRS Bull. 44, 715 (2019). https://doi.org/10.1557/mrs.2019.206CrossRef

SR Ovshinsky, Phys. Rev. Lett. 21, 1450 (1968). https://doi.org/10.1103/PhysRevLett.21.1450CrossRef

C. Yoo, W. Kim, J.W. Jeon et al., ACS Appl. Mater. Interfaces. 12, 23110 (2020). https://doi.org/10.1021/acsami.0c03747CrossRef

G. Liu, L. Wu, X. Chen et al., J. Alloys Compd. 792, 510 (2019). https://doi.org/10.1016/j.jallcom.2019.04.041CrossRef

S.D. Kim, H.W. Ahn, S. Shin et al., ECS Solid State Lett. 2, Q75 (2013). https://doi.org/10.1149/2.001310sslCrossRef

J.Ho Lee, G.Hwan Kim, Y. Bae Ahn et al., Appl. Phys. Lett. 100, 123505 (2012). https://doi.org/10.1063/1.3696077CrossRef

G. Liu, T. Li, L. Wu et al., ACS Applied Nano Materials 2, 5373 (2019). https://doi.org/10.1021/acsanm.9b00734CrossRef

H. Cheng, W. Chien, I. Kuo et al. In: 2018 IEEE International Electron Devices Meeting (IEDM)IEEE (2018)

10.

H.Y. Cheng, W.C. Chien, I.T. Kuo et al. In: 2017 IEEE International Electron Devices Meeting (IEDM) (2017)

11.

T. Kim, D. Lee, J. Kim, H. Sohn, Appl. Phys. Express 13, 045003 (2020). https://doi.org/10.35848/1882-0786/ab827cCrossRef

12.

M. Zhu, W. Song, P.M. Konze et al., Nat. Commun. 10, 3525 (2019). https://doi.org/10.1038/s41467-019-11506-0CrossRef

13.

S.S. Sarsembinov, O.Y. Prikhodko, A.P. Ryaguzov, S.Y. Maksimova, Semicond. Sci. Technol. 16, 872 (2001). https://doi.org/10.1088/0268-1242/16/10/310CrossRef

14.

A.S. Solieman, M.M. Hafiz, A.-hA. Abu-Sehly, A.-nA. Alfaqeer, J. Taibah Univ. Sci. 8, 282 (2014). https://doi.org/10.1016/j.jtusci.2014.01.002CrossRef

15.

D. Ielmini, Y. Zhang, J. Appl. Phys. 102, 054517 (2007). https://doi.org/10.1063/1.2773688CrossRef

16.

D. Ielmini, Y. Zhang, Appl. Phys. Lett. 90, 192102 (2007). https://doi.org/10.1063/1.2737137CrossRef

17.

R.A. Street, NF Mott, Phys. Rev. Lett. 35, 1293 (1975). https://doi.org/10.1103/PhysRevLett.35.1293CrossRef

18.

A.V. Kolobov, S.R. Elliott, J. Non-Cryst. Solids 189, 297 (1995). https://doi.org/10.1016/0022-3093(95)00245-6CrossRef

19.

A.P. Torane, C.H. Bhosale, Mater. Res. Bull. 38, 847 (2003). https://doi.org/10.1016/S0025-5408(03)00030-8CrossRef

20.

V. Kovanda, M. Vlček, H. Jain, J. Non-Crystalline Solids 88, 326–327 (2003). https://doi.org/10.1016/S0022-3093(03)00383-1CrossRef

21.

A. Siokou, M. Kalyva, S.N. Yannopoulos, P. Němec, M. Frumar, J. Non-Cryst. Solids 352, 1520 (2006). https://doi.org/10.1016/j.jnoncrysol.2005.12.021CrossRef

22.

A. Dahshan, KA Aly, Phil. Mag. 88, 361 (2008). https://doi.org/10.1080/14786430701846214CrossRef

Title: Characteristic of As3Se4-based ovonic threshold switching device
Authors: Zhenhui Yuan
Xiaodan Li
Hao Wang
Yuan Xue
Sannian Song
Zhitang Song
Shuaishuai Zhu
Gang Han
Bingjun Yang
Takehito Jimbo
Koukou Suu
Publication date: 20-02-2021
Publisher: Springer US
Published in: Journal of Materials Science: Materials in Electronics / Issue 6/2021
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI: https://doi.org/10.1007/s10854-021-05429-0

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