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Journal of Electronic Materials
Published in: Journal of Electronic Materials 3/2001

01-03-2001 | Special Issue Paper

Comparison of F2 plasma chemistries for deep etching of SiC

Authors: P. Leerungnawarat, K. P. Lee, S. J. Pearton, F. Ren, S. N. G. Chu

Published in: Journal of Electronic Materials | Issue 3/2001

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previous article Comparison of current-voltage characteristics of n- and p-type 6H-SiC Schottky diodes
next article Structural and electrical properties of unintentionally doped 4H-SiC epitaxial layers—Grown by hot-wall CVD

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Metadata
Title
Comparison of F2 plasma chemistries for deep etching of SiC
Authors
P. Leerungnawarat
K. P. Lee
S. J. Pearton
F. Ren
S. N. G. Chu
Publication date
01-03-2001
Publisher
Springer-Verlag
Published in
Journal of Electronic Materials / Issue 3/2001
Print ISSN: 0361-5235
Electronic ISSN: 1543-186X
DOI
https://doi.org/10.1007/s11664-001-0016-0

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