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Semiconductors
Published in: Semiconductors 1/2008

01-01-2008 | Physics of Semiconductor Devices

Contribution of Auger recombination to saturation of the light-current characteristics in high-power laser diodes (λ = 1.0–1.9 m m)

Authors: A. V. Lyutetskiĭ, K. S. Borshchev, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, I. S. Tarasov

Published in: Semiconductors | Issue 1/2008

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Metadata
Title
Contribution of Auger recombination to saturation of the light-current characteristics in high-power laser diodes (λ = 1.0–1.9 m m)
Authors
A. V. Lyutetskiĭ
K. S. Borshchev
N. A. Pikhtin
S. O. Slipchenko
Z. N. Sokolova
I. S. Tarasov
Publication date
01-01-2008
Publisher
SP MAIK Nauka/Interperiodica
Published in
Semiconductors / Issue 1/2008
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782608010156

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