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Published in: Journal of Materials Science: Materials in Electronics 23/2020

20-10-2020

Crystal engineering and physicochemical properties of l-threoninium succinate (LTS) single crystal for frequency conversion applications

Authors: S. E. Allen Moses, S. M. Ravi Kumar, Tejaswi Ashok Hegde

Published in: Journal of Materials Science: Materials in Electronics | Issue 23/2020

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Abstract

The synthesis and characterization of organic nonlinear optical active (NLO) single crystal of l-threoninium succinate (LTS) were carried out in this work. LTS crystal was prepared by slow evaporation technique using deionized water as solvent in a period of 82 days and the obtained LTS crystal was subjected to such characterizations as single-crystal X-ray diffraction analysis, UV–Vis–NIR spectroscopy analysis, FT-IR spectrum analysis, thermal analysis, second harmonic generation, and surface quality analysis. The third-order nonlinear optical properties of the LTS crystal were estimated at 532 nm using semiconductor laser source. Then it was employed for Z-scan analyzer to sense the nonlinear refractive index (n2), absorption coefficient (β), and third-order susceptibility (χ3). Through this analysis, this research calculated the n2 = 2.35 × 10–15 (m3/W), β = 1.3057 × 10–8 (m/W), and χ3 = 1.0571 × 10−13 (esu) were determined. The obtained results exhibited an appropriate variation in optical limiting behavior of the LTS material which saturates at higher intensities with respect to input and output power. The laser damaged threshold (LDT) technique enables the great resistivity toward optical high energy and it is found to be 52.7 mJ.

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Metadata
Title
Crystal engineering and physicochemical properties of l-threoninium succinate (LTS) single crystal for frequency conversion applications
Authors
S. E. Allen Moses
S. M. Ravi Kumar
Tejaswi Ashok Hegde
Publication date
20-10-2020
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 23/2020
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-020-04621-y

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