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Optical and Quantum Electronics

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01-10-2014

Dependence of laser beam induced current on geometrical sizes of the junction for HgCdTe photodiodes

Authors: Ali Feng, Guang Li, Gang He, Zhaoqi Sun

Published in: Optical and Quantum Electronics | Issue 10/2014

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Abstract

The dependence of laser beam induced current (LBIC) on the junction structure of \(\text {n}^{+}\)-on-p HgCdTe photodiode has been numerically investigated. The calculated LBIC profiles varying with the junction depth are in good agreement with the experimental results (Musca et al. in J Electron Mater 28:603–610, 1999). It is found that there is a linear relationship between the magnitude of LBIC peak and the size of junction, such as depth and length. In addition, the LBIC shape between two peaks becomes more flat with increasing the junction depth. A competition mechanism of lateral and vertical current flow is proposed to explain the junction size dependence of the LBIC signal. The results help us to better understand the induced current flowing in photodiodes with different junction structures.

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Title: Dependence of laser beam induced current on geometrical sizes of the junction for HgCdTe photodiodes
Authors: Ali Feng
Guang Li
Gang He
Zhaoqi Sun
Publication date: 01-10-2014
Publisher: Springer US
Published in: Optical and Quantum Electronics / Issue 10/2014
Print ISSN: 0306-8919
Electronic ISSN: 1572-817X
DOI: https://doi.org/10.1007/s11082-013-9841-7

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