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Optical and Quantum Electronics
Erschienen in: Optical and Quantum Electronics 10/2014

01.10.2014

Dependence of laser beam induced current on geometrical sizes of the junction for HgCdTe photodiodes

verfasst von: Ali Feng, Guang Li, Gang He, Zhaoqi Sun

Erschienen in: Optical and Quantum Electronics | Ausgabe 10/2014

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Abstract

The dependence of laser beam induced current (LBIC) on the junction structure of \(\text {n}^{+}\)-on-p HgCdTe photodiode has been numerically investigated. The calculated LBIC profiles varying with the junction depth are in good agreement with the experimental results (Musca et al. in J Electron Mater 28:603–610, 1999). It is found that there is a linear relationship between the magnitude of LBIC peak and the size of junction, such as depth and length. In addition, the LBIC shape between two peaks becomes more flat with increasing the junction depth. A competition mechanism of lateral and vertical current flow is proposed to explain the junction size dependence of the LBIC signal. The results help us to better understand the induced current flowing in photodiodes with different junction structures.
Vorheriger Artikel Phototransistor noise model based on noise measurements on PNP PIN phototransistors
Nächster Artikel Design of spectral crosstalk suppressing structure in two-color HgCdTe infrared focal plane arrays detector

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Metadaten
Titel
Dependence of laser beam induced current on geometrical sizes of the junction for HgCdTe photodiodes
verfasst von
Ali Feng
Guang Li
Gang He
Zhaoqi Sun
Publikationsdatum
01.10.2014
Verlag
Springer US
Erschienen in
Optical and Quantum Electronics / Ausgabe 10/2014
Print ISSN: 0306-8919
Elektronische ISSN: 1572-817X
DOI
https://doi.org/10.1007/s11082-013-9841-7

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