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Published in:
08-07-2017
Design of high performance normally-off dual junction gate AlGaN/GaN heterostructure field effect transistors for high voltage application
Published in: Journal of Computational Electronics | Issue 3/2017
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Abstract
In this paper, a novel normally-off dual junction gate AlGaN/GaN heterostructure field effect transistor (DJG-HFET) is proposed for reducing on-resistance, decreasing the subthreshold swing, enhancing threshold voltage and improving the breakdown voltage. The proposed DJG-HFET is simulated by a Lombardi mobility model calibrated by comparing with the experimental results of a p-type gate GaN-based HFET. The on-resistance can be reduced 34% while the on-state current can be increased 40% for common p-type gate GaN based HFETs by inducing a new channel under the gate at \(V_\mathrm{GS}=5 \,\hbox {V}\), and the leakage current remains 0.4 nA/mm when \(V_\mathrm{GS}=0\,\hbox {V}\) and \(V_\mathrm{DS}>600\,\hbox {V}\). The breakdown voltage of the proposed device is 910 V, which is 14% higher than that of common p-type gate GaN-based HFETs. The lowest \(R_\mathrm{on}\) of \(9.8\,\Omega \, \hbox {mm}\) and the highest \(V_\mathrm{th}\) of 2 V can be achieved by optimizing the design parameter of \( D_\mathrm{bg}\) and \(N_\mathrm{p}\).