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Semiconductors
Published in: Semiconductors 2/2013

01-02-2013 | Surfaces, Interfaces, and Thin Films

Determination of the thickness and spectral dependence of the refractive index of Al x In1 − x Sb epitaxial layers from reflectance spectra

Authors: O. S. Komkov, D. D. Firsov, A. N. Semenov, B. Ya. Meltser, S. I. Troshkov, A. N. Pikhtin, S. V. Ivanov

Published in: Semiconductors | Issue 2/2013

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previous article Electrically active centers formed in silicon during the high-temperature diffusion of boron and aluminum
next article Recrystallization of silicon-on-sapphire structures at various amorphization-ion-beam energies

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Metadata
Title
Determination of the thickness and spectral dependence of the refractive index of Al x In1 − x Sb epitaxial layers from reflectance spectra
Authors
O. S. Komkov
D. D. Firsov
A. N. Semenov
B. Ya. Meltser
S. I. Troshkov
A. N. Pikhtin
S. V. Ivanov
Publication date
01-02-2013
Publisher
SP MAIK Nauka/Interperiodica
Published in
Semiconductors / Issue 2/2013
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782613020140

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