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Published in: Journal of Materials Science: Materials in Electronics 10/2014

01-10-2014

Dielectric and microwave properties study of TiFeNbO6 ceramics added Bi2O3

Authors: D. G. Sousa, G. D. Saraiva, J. M. S. Filho, J. M. Filho, A. S. B. Sombra

Published in: Journal of Materials Science: Materials in Electronics | Issue 10/2014

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Abstract

In this paper the ceramic matrix of TiFeNbO6 (TFNO) was studied. The TFNO phase was calcined at 1,075 °C and used to prepare the samples, of 2, 4, 6, 8 and 10 wt% of the Bi2O3 and sintered at 1,125 °C. These samples were characterized by X-ray diffraction (XRD), Raman spectroscopy (RS), scanning electron microscopy and dielectric microwave properties. XRD and RS were used to characterize these samples. The samples presented two new phases. The first phase is the tetragonal rutile structure with a space group of P42/mnm, equivalent at parent rutile Ti0.4Fe0.3 Nb0.3O2 (TFNO) with 040725 ICSD code, and the secondary phase belonging to the pyrochlore system Bi1.721Fe1.056Nb1.134O7 (BFNO), with a space group of Fd-3mZ (227), in a cubic structure. The dielectric properties have shown significant variation for 10 % Bi2O3-added sample, because the formation of the new phase (BFNO) contributes with the reduction of τ f from 281.12 to 77.45 ppm/°C and with increase in ε r , from 47.23 to 63.77 and an increase in the dielectric loss (tan δ), from 0.0016 to 0.0068, respectively. Even though, Bi2O3 additive deteriorates the dielectric loss of the ceramics, the permittivity has enhanced significantly, which is advantageous for reduction of the air gap between the probe and the DRA antennas that influences on the samples for future application in microwave.

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Metadata
Title
Dielectric and microwave properties study of TiFeNbO6 ceramics added Bi2O3
Authors
D. G. Sousa
G. D. Saraiva
J. M. S. Filho
J. M. Filho
A. S. B. Sombra
Publication date
01-10-2014
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 10/2014
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-014-2187-5

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