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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 1/2014

01-01-2014

Dielectric properties and high-temperature dielectric relaxation of Ba4Gd2Fe2Nb8−xTaxO30 ceramics

Authors: Zhao Yang, Liang Fang, Laijun Liu, Congxue Su, Changzhen Hu

Published in: Journal of Materials Science: Materials in Electronics | Issue 1/2014

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Abstract

Several ferrum oxides of formula Ba4Gd2Fe2Nb8−xTaxO30 (x = 2, 4, 6 and 8) with tetragonal tungsten-bronze structure have been synthesized by the conventional solid state sintering method. Dielectric response of the samples was studied using AC impedance spectroscopy and universal dielectric relaxation law in detail. The dielectric anomaly at high temperature is attributed to the mobility of oxygen vacancies. Arrhenius activation energy associated with the migration of oxygen vacancies is estimated from impedance spectroscopy, which is 0.77, 1.11, 1.26 and 1.02 eV for x = 2, 4, 6 and 8, respectively.
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Metadata
Title
Dielectric properties and high-temperature dielectric relaxation of Ba4Gd2Fe2Nb8−xTaxO30 ceramics
Authors
Zhao Yang
Liang Fang
Laijun Liu
Congxue Su
Changzhen Hu
Publication date
01-01-2014
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 1/2014
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-013-1553-z

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