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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 7/2015

01-07-2015

Effect of buffer layer on growth and properties of ZnO nanorod arrays

Authors: Zhixiang Ye, Xiaohong Ji, Qinyuan Zhang

Published in: Journal of Materials Science: Materials in Electronics | Issue 7/2015

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Abstract

ZnO nanorods arrays on ZnO buffered Si substrates have been obtained by conventional chemical vapor deposition. The influence of ZnO buffer layer on the growth and properties of the ZnO nanorods have been studied. The morphology and the alignment ordering of ZnO nanorods arrays were greatly affected by the thickness of ZnO buffers. Photoluminescence and field emission properties can be enhanced by modulating the thicknesses of the ZnO buffer layers. ZnO nanorods with the best crystallinity and the highest ordering were obtained with 50-nm-thick ZnO buffer layer, which exhibits the strongest UV emission.
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Metadata
Title
Effect of buffer layer on growth and properties of ZnO nanorod arrays
Authors
Zhixiang Ye
Xiaohong Ji
Qinyuan Zhang
Publication date
01-07-2015
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 7/2015
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-015-3057-5

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