Skip to main content
Disciplines
Automotive Business IT + Informatics Construction + Real Estate Electrical Engineering + Electronics Energy + Sustainability Insurance + Risk Finance + Banking Management + Leadership Marketing + Sales Mechanical Engineering + Materials
Events
DE
EN
Books
Journals
Topic Page
Marketing
Start single access now
Access for companies
EXTENDED SEARCH
Log in
Top
Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 7/2015

01-07-2015

Advances in ZnO–Bi2O3 based varistors

Authors: Jianying Li, Shengtao Li, Pengfei Cheng, Mohammad A. Alim

Published in: Journal of Materials Science: Materials in Electronics | Issue 7/2015

Log in

Activate our intelligent search to find suitable subject content or patents.

search-config
loading …

Abstract

In this review paper detailed development of the ZnO–Bi2O3 based polycrystalline varistors are presented as the technological importance emerged with the rapid applications of the gapless surge protectors superseding traditional gapped SiC designs. The excellent symmetric nonlinear current–voltage (I–V) characteristic of these varistors results from the type of back-to-back electrical potential barriers that are formed between the successive ZnO grains during the step-wise processing cycles. The role of microstructures and the defect structures in conjunction with the processing parameters paved the road to the understanding of the degradation and failure mechanisms of the electrical potential barriers for acceptable protective characteristics. The nature of the processing variables influencing eventual performance of varistors is discussed.
previous article Progress in development of copper antimony sulfide thin films as an alternative material for solar energy harvesting
next article Plasma treated graphene oxide films: structural and electrical studies

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Wirtschaft"

Online-Abonnement

Mit Springer Professional "Wirtschaft" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 340 Zeitschriften

aus folgenden Fachgebieten:

  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Versicherung + Risiko




Jetzt Wissensvorsprung sichern!

inform now
Literature
1.
F.R. Stansel, The characteristics and some applications of varistors. Proc. I.R.E. 39(4), 342–358 (1951)
2.
M. Matsuoka, Nonohmic properties of zinc oxide ceramics. Jpn. J. Appl. Phys. 10, 736–746 (1971)
3.
M. Matsuoka, T. Masuyama, Y. Iida, Voltage nonlinearity of zinc oxide ceramics doped with alkali earth metal oxide. Jpn. J. Appl. Phys. 8, 1275–1276 (1969)
4.
K.B. McEachron, Thyrite: a new material for lightning arresters. Gen Electr Rev 33(2), 92–99 (1930)
5.
K.B. McEachron, Thyrite: a new material for lightning arresters. J. Am. Inst. Electr. Eng. 49(2), 410–417 (1930)
6.
K.B. McEachron, Abridgment of thyrite: a new material for lightning arresters. J. Am. Inst. Electr. Eng. 49(5), 350–353 (1930)
7.
K.B. McEachron, Discharge device and resistance material, U.S. Patent 1,822,742, 8 Sept 1931
8.
G.L. Usselman, P. Jefferson, Thyrite protective device, U.S. Patent 2,320,958, 1 June 1943
9.
A.T. Santhanam, T.K. Gupta, W.G. Carlson, Microstructural evaluation of multicomponent ZnO ceramics. J. Appl. Phys. 50(2), 852–859 (1979)
10.
T.K. Gupta, Applications of zinc oxide varistors. J. Am. Ceram. Soc. 73, 1817–1840 (1990)
11.
L.M. Levinson, H.R. Philipp, High-frequency and high-current studies on metal oxide varistors. J. Appl. Phys. 47, 3116–3121 (1976)
12.
L.M. Levinson, H.R. Philipp, AC properties of metal oxide varistors. J. Appl. Phys. 47, 1117–1122 (1976)
13.
L.M. Levinson, H.R. Philipp, The physics of metal oxide varistors. J. Appl. Phys. 46, 1332–1341 (1975)
14.
M.A. Alim, S. Li, F. Liu, P. Cheng, Electrical barriers in the ZnO varistor grain boundaries. Phys Status Solidi (A) 203(2), 410–427 (2006)
15.
M.A. Alim, Admittance-frequency response in zinc oxide varistor ceramics. J. Am. Ceram. Soc. 72(1), 28–32 (1989)
16.
M.A. Alim, M.A. Seitz, R.W. Hirthe, Complex plane analysis of trapping phenomena in zinc oxide varistors. J. Appl. Phys. 63(7), 2337–2345 (1988)
17.
A. Zubair, S.A. Siddiqui, F.A. Khan, M.A. Alim, Electrical and magnetic properties of Co substituted MnZnFe2O4. Phys. Status Solidi A 209(12), 2441–2448 (2012)
18.
J. Li, X. Zhao, S. Li, M.A. Alim, Intrinsic and extrinsic relaxation of Cu3Ti4O12 ceramics: effect of sintering. J. Appl. Phys. 108, 104104 (2010)
19.
J. Li, S. Luo, W. Yao, Z. Tang, Z. Zhang, M.A. Alim, The effect of magnetized water on TiO2 based varistors. J. Eur. Ceram. Soc. 24, 2605–2611 (2004)
20.
J. Li, S. Li, M.A. Alim, The effect of reducing atmosphere on the SrTiO3 based varistor–capacitor materials. J. Mater. Sci.: Mater. Electron. 17, 503–508 (2006)
21.
W. Zhu, C.C. Wang, S.A. Akbar, R. Asiaie, P.K. Dutta, M.A. Alim, The AC electrical behavior of hydrothermally synthesized barium titanate ceramics. Jpn. J. Appl. Phys. 35 Part 1(12A), 6145–6152 (1996)
22.
J. Li, S. Li, F. Liu, M.A. Alim, G. Chen, The origin of varistor property of SrTiO3-based ceramics. J Mater Sci: Mater Electron 14, 483–486 (2003)
23.
C.C. Wang, W.H. Chen, S.A. Akbar, M.A. Alim, High-temperature a.c. electrical behaviour of polycrystalline calcium zirconate. J. Mater. Sci. 32, 2305–2312 (1997)
24.
C.C. Wang, V.D. Patton, S.A. Akbar, M.A. Alim, Effect of zirconia doping on the electrical behavior of yttria. J. Mater. Res. 11(2), 422–429 (1996)
25.
A.M. Azad, L.B. Younkman, S.A. Akbar, M.A. Alim, Characterization of TiO2-based sensor materials using immittance spectroscopy. J. Am. Ceram. Soc. 77(2), 481–486 (1994)
26.
M.S. Kosman, E.G. Pettsold, Possibility of preparing symmetrical varistors from zinc oxide containing an addition of bismuth oxide, Uchenye Zapisky Leningr Gosudarst Pedagog. Inst. Im A. I. Gertsen 207, 191–197 (1961)
27.
M.S. Kosman, J.A. Gesse, Dielektriceskaja Pro-nika Jemost Okisi Cinka s Primiestju Okisi Bismuta. Izvest. Akad. Nauk SSR Ser. Fiz. 22(3), 315–318 (1958)
28.
M.S. Kosman, J.A. Gesse, Uchenye Zapisky Leningr Gosudarst Pedagog. Inst. Im A. I. Gertsen 148, 85 (1958)
29.
K.S. Valeev, V.A. Knyazev, N.G. Drozdo, Nonlinear semiconductor resistors based on oxides of Zn, Si, and Sn. Elektrickestvo (USSR) 4, 72–76 (1964)
30.
K.S. Valeev, M.D. Mashkovich, Nonlinear semiconductors based upon ZnO–TiO2. Sov. Phys. J. Tech. Phy. (USSR), 27, 1649–1651 in Russian, 1533-1535 in English (1957)
31.
K. Mukae, K. Tsuda, I. Nagasawa, Non-ohmic properties of ZnO-rare earth metal oxide-Co3O4 ceramics. Jpn. J. Appl. Phys. 16(8), 1361–1368 (1977)
32.
K. Mukae, Zinc oxide varistors with praseodymium oxide. Am. Ceram. Soc. Bull. 66(9), 1329–1331 (1987)
33.
L.C. Sletson, M.E. Potter, M.A. Alim, Influence of sintering temperature on intrinsic trapping in zinc oxide-based varistors. J. Am. Ceram. Soc. 71, 909–913 (1988)
34.
M.A. Alim, Influence of intrinsic trapping on the performance characteristics of ZnO–Bi2O3 based varistors. Act. Passiv. Electr. Compon. 17, 99–118 (1994)
35.
M.A. Alim, Influence of multiple trapping phenomena on the applications criteria of ZnO–Bi2O3 based varistors. Act. Passiv. Electron. Compon. 17, 57–65 (1994)
36.
M.A. Alim, M.A. Seitz, R.W. Hirthe, High-temperature/field alternating current behavior of ZnO-based varistors. J. Am. Ceram. Soc. 71, C52–C55 (1988)
37.
M.A. Alim, M.A. Seitz, Singular nature of preferential conducting paths at high electric fields in ZnO-based varistors. J. Am. Ceram. Soc. 71, C246–C249 (1988)
38.
M.A. Alim, High-frequency terminal resonance in ZnO–Bi2O3-based varistors. J. Appl. Phys. 74(9), 5850–5853 (1993)
39.
M.A. Alim, An analysis of the Mott–Schottky behavior in ZnO–Bi2O3 based varistors. J. Appl. Phys. 78(7), 4776–4779 (1995)
40.
M.A. Alim, S. Bhattacharjee, S. Khanam, S. Runa, N. Muna, The behavior of the ZnO–Bi2O3-based varistor capacitance. J. Act. Passiv. Electron. Devices 9(2), 157–184 (2014)
41.
W.G. Morris, Physical properties of electrical barriers in varistors. J. Vac. Sci. Technol. 13, 926–931 (1976)
42.
F. Greuter, G. Blatter, Electrical properties of grain boundaries in polycrystalline compound semiconductors. Semicond. Sci. Technol. 5, 111–137 (1990)
43.
J.E. Schroeder, J.F. Rasmussen, Insulating coating for surge arrester valve element, U.S. Patent 4,278,961, 14 July 1981
44.
L.M. Levinson, H.F. Ellis, H. Fishman, Arrester with graded capacitance varistors, U.S. Patent 4,276,578, 30 June 1981
45.
J.S. Kresge, H.E. Fiegel, Electrical overvoltage surge arrester with a long time constant valve section and series gap section, U.S. Patent 3,967,160, 29 June 1976
46.
M. Lei, S. Li, X. Jiao, J. Li, M.A. Alim, The influence of CeO2 on the microstructure and electrical behaviour of ZnO–Bi2O3 based varistors. J. Phys. D Appl. Phys. 37, 804–812 (2004)
47.
M. Lei, S. Li, J. Li, M.A. Alim, The role of CeO2 in the high electric field ZnO varistors. J. Appl. Sci. 6(8), 1671–1678 (2006)
48.
E. Olsson, G.L. Dunlop, Characterization of individual interfacial barriers in a ZnO varistor material. J. Appl. Phys. 66(8), 3666–3675 (1989)
49.
M. Tao, B. Ai, O. Dorlanne, A. Loubiere, Different ‘single grain junction’ within a ZnO varistor. J. Appl. Phys. 61(4), 1562–1567 (1987)
50.
M. Bartkowiak, G.D. Mahan, F.A. Modine, M.A. Alim, R. Lauf, A. McMillan, Voronoi network model of ZnO varistors with different types of grain boundaries. J. Appl. Phys. 80(11), 6516–6522 (1996)
51.
M. Bartkowiak, G.D. Mahan, F.A. Modine, M.A. Alim, Influence of ohmic grain boundaries in ZnO varistors. J. Appl. Phys. 79(1), 273–281 (1996)
52.
M. Bartkowiak, G.D. Mahan, F.A. Modine, M.A. Alim, Jpn J Appl Phys 35 Part-2(4A), L414–L417 (1996)
53.
M. Bartkowiak, G.D. Mahan, Nonlinear currents in voronoi networks. Phys. Rev. B 51(16), 10825 (1995)
54.
K. Eda, Destruction mechanism of ZnO varistors due to high currents. J. Appl. Phys. 56(10), 2948–2955 (1984)
55.
G. Blatter, F. Greuter, Electrical breakdown at semiconductor grain boundaries. Phys. Rev. B 34, 8555–8572 (1986)
56.
L.M. Levinson, H.R. Philipp, Low-temperature AC properties of metal-oxide varistors. J. Appl. Phys. 49(12), 6142–6146 (1978)
57.
L.M. Levinson, H.R. Philipp, Low-temperature electrical studies on metal-oxide varistors—a clue to conduction mechanisms. J. Appl. Phys. 48(4), 1621–1627 (1977)
58.
T. Izumiya, S. Miyauchi, R. Yamamoto, M. Doyama, Electron irradiation effects on zinc oxide varistors. Jpn. J. Appl. Phys. 26(9), L1529–L1532 (1987)
59.
N. Shohata, J. Yoshida, Effect of glass on non-ohmic properties of ZnO ceramic varistors. Jpn. J. Appl. Phys. 16(12), 2299–2300 (1977)
60.
A. Iga, M. Matsuoka, T. Masuyama, Effect of heat-treatment on current creep phenomena in nonohmic ZnO ceramics. Jpn. J. Appl. Phys. 15(9), 1847–1848 (1976)
61.
A. Bui, H.T. Nguyen, A. Loubiere, High-field ZnO-based varistors. J. Phys. D Appl. Phys. 28, 774–782 (1995)
62.
G.D. Mahan, Intrinsic defects in ZnO varistors. J. Appl. Phys. 54(7), 3825–3832 (1983)
63.
H.E. Brown, Zinc Oxide Rediscovered (New Jersey Zinc Company, New York, 1957)
64.
H.E. Brown, Zinc Oxide—Properties and Applications (International Lead and Zinc Research Organization Inc, New York, 1976)
65.
K. Lott, S. Shinkarenko, T. Kirsanova, A. Grebennik, A. Vishnjakov, Atomic absorption photometry of excess Zn in ZnO. Phys. Status Solidi (c) 2(3), 1200–1205 (2005)
66.
C.-C. Lin, C.-S. Hsiao, S.-Y. Chen, S.-Y. Cheng, Ultraviolet emission in ZnO films controlled by point defects. J. Electrochem. Soc. 151(5), G285–G288 (2004)
67.
P.H. Miller, The electrical conductivity of zinc oxide. Phys. Rev. 60, 890–895 (1941)
68.
D.G. Thomas, Interstitial zinc in zinc oxide. J. Phys. Chem. Solids 3, 229–237 (1957)
69.
A.R. Hutson, Electronic properties of ZnO. J. Phys. Chem. Solids 8, 467–472 (1959)
70.
A.R. Hutson, Hall effect studies of doped zinc oxide single crystals. Phys. Rev. 108, 222–230 (1957)
71.
U. Ozgur, Y.I. Alivov, C. Liu, A. Teke, M.A. Reshchikov, S. Dogan, V. Avrutin, S.J. Cho, H. Morkoc, A comprehensive review of ZnO materials and devices. Appl. Phys. Rev. 98, 041301 (2005)
72.
S.J. Pearton, D.P. Norton, K. Ip, Y.W. Heo, T. Steiner, Recent progress in processing and properties of ZnO. Prog. Mater. Sci. 50, 293–340 (2005)
73.
F.A. Kroger, The chemistry of imperfect crystals, 2nd edn. (North-Holland Pub. Co., Amsterdam, 1974), pp. 743–752
74.
F.A. Selim, M.H. Weber, D. Solodovnikov, K.G. Lynn, Nature of native defects in ZnO. Phys. Rev. Lett. 99, 085505 (2007)
75.
K.I. Hagemark, Defect structure of Zn-doped ZnO. J. Solid State Chem. 16, 293–299 (1976)
76.
E.A. Secco, W.J. Moore, Diffusion and exchange of zinc in crystalline zinc oxide. J. Chem. Phys. 26, 942–948 (1957)
77.
D.C. Look, Recent advances in ZnO materials and devices. Mater. Sci. Eng. B 80, 383–387 (2001)
78.
S.B. Zhang, S.H. Wei, A. Zunger, Intrinsic n-type versus p-type asymmetry and the defect physics of ZnO. Phys. Rev. B 63, 075205 (2001)
79.
A. Janotti, C.G. Van de Walle, New insight into the role of native point defects in ZnO. J. Cryst. Growth 287, 58–65 (2006)
80.
J. Wong, Microstructure and phase transformation in highly nonohmic metal oxide varistor ceramics. J. Appl. Phys. 46(4), 1653–1659 (1975)
81.
J. Li, S. Li, F. Liu, M.A. Alim, The Influence of heat-treatment on the current–voltage behavior of the ZnO–Bi2O3 based varistors. J. Mater. Sci.: Mater. Electron. 17, 211–217 (2006)
82.
J.W. Medernach, R.L. Snyder, Powder diffraction pattern and structures of bismuth oxides. J. Am. Ceram. Soc. 61(11–12), 494–497 (1978)
83.
E. Olsson, G.L. Dunlop, The effect of Bi2O3 content on the microstructure and electrical properties of ZnO varistor materials. J. Appl. Phys. 66, 4317–4324 (1989)
84.
T. Takemura, M. Kobayashi, Y. Takada, K. Sato, Effects of contents of Bi2O3 and Sb2O3 on lattice parameters of phases of ZnO varistor ceramics. Jpn. J. Appl. Phys. 25, 293–294 (1986)
85.
A.G. Milnes, Deep Impurities in Semiconductors (John Wiley and Sons, New York, 1973)
86.
R.S. Muller, T.I. Kamins, M. Chan, Device Electronics for Integrated Circuits, 3rd edn. (John Wiley and Sons, New York, 2003)
87.
M. A. Seitz, R. W. Hirthe, M. E. Potter in Thermal Runaway in Metal Oxide Varistors, Materials Research Society Symposia Proceedings: Grain Boundaries in Semiconductors, vol. 5, ed. by H. J. Leamy, G. E. Pike, and C. H. Seager (North Holland, New York, 1982), pp. 405–410
88.
R. Einzinger, in Grain Boundary Phenomena in ZnO Varistors, Materials Research Society Symposia Proceedings: Grain Boundaries in Semiconductors,5, ed. by H. J. Leamy, G. E. Pike, and C. H. Seager, (1982), pp. 343–353
89.
G.D. Mahan, L.M. Levinson, H.R. Philipp, Theory of conduction in ZnO varistors. J. Appl. Phys. 50(4), 2799–2812 (1979)
90.
P.R. Emtage, The physics of zinc oxide varistors. J. Appl. Phys. 48(10), 4372–4384 (1977)
91.
J.T.C. van Kemenade, R.K. Eijnthoven, Direct determination of barrier voltage in ZnO varistors. J. Appl. Phys. 50(2), 938–941 (1979)
92.
U. Schwing, B. Hoffman, Model experiments describing the microcontact of ZnO varistors. J. Appl. Phys. 57(12), 5372–5379 (1985)
93.
A. Miralles, A. Cornet, J.R. Morante, Conduction mechanisms and temperature dependencee dependence of the electroluminescence in ZnO varistors. Semicond. Sci. Technol. 1, 230–233 (1986)
94.
J.C. Simpson, J.E. Cordaro, Defect clusters in zinc oxide. J. Appl. Phys. 67, 6760–6763 (1990)
95.
Y. Shim, J.E. Cordaro, Effects of dopants on the deep bulk levels in the ZnO–Bi2O3–MnO2 system. J. Appl. Phys. 64, 3994–3998 (1988)
96.
J.C. Simpson, J.E. Cordaro, Characterization of deep levels in zinc oxide. J. Appl. Phys. 63(5), 1781–1783 (1988)
97.
Y. Shim, J.F. Cordaro, Admittance spectroscopy of polycrystalline ZnO–Bi2O3 and ZnO–BaO systems. J. Am. Ceram. Soc. 71, 184–188 (1988)
98.
J.F. Cordaro, Y. Shim, J.E. May, Bulk electron traps in zinc oxide varistors. J. Appl. Phys. 60, 4186–4190 (1986)
99.
H. Ochi, A. Igari, M. Toyoda, and Z. Nakagawa, Sintered varistor material with small particle size, U.S. Patent 5,382,385, 17 Jan 1995
100.
H. Ochi, A. Igari, and M. Toyoda, Varistor material and method of producing same from zinc oxide and manganese oxide: controlled porosity and high nonlinear coefficient, U.S. Patent 5,116,542, 26 May 1992
101.
J.E. May, Process for making a low voltage varistor, U.S. Patent 3,950,274, 13 Apr 1976
102.
P. Cheng, S. Li, J. Li, Application of dielectric spectroscopy in ZnO varistor ceramics. Adv. Mater. Res. 393–395, 24–27 (2012)
103.
P. Cheng, S. Li, H. Wang, Dielectric properties of grain grain-boundary binary system. Phys. B 449, 160–163 (2014)
104.
P. Cheng, J. Song, S. Li, H. Wang, Modulus spectroscopy of grain–grain-boundary binary system. Phys. B 459, 105–109 (2015)
105.
P. Cheng, S. Li, H. Wang, Dielectric spectroscopy studies of ZnO single crystal. Chin. Phys. B 22(10), 107701 (2013)
106.
P. Cheng, S. Li, J. Li, C. Ding, Y. Yang, Physical meaning of conductivity spectra for ZnO ceramics. Chin. Phys. B 21(9), 097201 (2012)
107.
M. Andres-Verges, A.R. West, Impedance and modulus spectroscopy of ZnO varistors. J. Electroceram. 1(2), 125–132 (1997)
108.
I.M. Hodge, M.D. Ingram, A.R. West, A new method for analyzing the a.c. behavior of polycrystalline solid electrolytes. Electroanal. Chem. Interfacial Electrochem. 58, 429–432 (1975)
109.
I.M. Hodge, M.D. Ingram, A.R. West, Impedance and modulus spectroscopy of polycrystalline solid electrolytes. J. Electroanal. Chem. Interfacial Electrochem. 74, 125–143 (1976)
110.
X. Zhao, J. Li, H. Li, S. Li, Intrinsic and extrinsic defect relaxation behavior of ZnO ceramics. J. Appl. Phys. 111, 124106 (2012)
111.
S.M. Sze, K.K. Ng, Physics of Semiconductors, 3rd edn. (John Wiley, New Jersey, 2007)
112.
K. Mukae, K. Tsuda, I. Nagasawa, Capacitance-vs-voltage characteristics of ZnO varistors. J. Appl. Phys. 50(6), 4475–4476 (1979)
113.
A. Nevosad, M. Hofstaetter, R. Supancic, R. Danzer, C. Teichert, Micro four-point probe investigation of individual ZnO grain boundaries in a varistor ceramic. J. Eur. Ceram. Soc. 34(8), 1963–1970 (2014)
114.
J. Liu, J. He, J. Hu, W. Long, F. Luo, Statistics on the AC ageing characteristics of single grain boundaries of ZnO varistor. Mater. Chem. Phys. 125(1–2), 9–11 (2011)
115.
N. Daneu, A. Recnik, S. Bernik, Grain-growth phenomena in ZnO ceramics in the presence of inversion boundaries. J. Am. Ceram. Soc. 94(5), 1619–1626 (2011)
116.
J. He, J. Liu, J. Hu, R. Zeng, W. Long, Non-uniform ageing behavior of individual grain boundaries in ZnO varistor ceramics. J. Eur. Ceram. Soc. 31(8), 1451–1456 (2011)
117.
K. Mukae, A. Ohi, A. Tanaka, Electronic interface states at grain boundaries in ZnO:Pr varistors by single grain boundary measurements. J. Eur. Ceram. Soc. 21(10–11), 1871–1874 (2001)
118.
B.A. Haskell, S.J. Souri, M.A. Helfand, Varistor behavior at twin boundaries in ZnO. J. Am. Ceram. Soc. 82(8), 2106–2110 (1999)
119.
P.R. Bueno, M.R. de Cassia-Santos, E.R. Leite, E. Longo, J. Bisquert, G. Garcia-Belmonte, F. Fabregat-Santiago, Nature of the Schottky-type barrier of highly dense SnO2 systems displaying nonohmic behavior. J. Appl. Phys. 88(11), 6545–6548 (2000)
120.
P.R. Bueno, J.A. Varela, E. Longo, SnO2, ZnO and related polycrystalline compound semiconductors: an overview and review on the voltage-dependent resistance (non-ohmic) feature. J. Eur. Ceram. Soc. 28(3), 505–529 (2008)
121.
S.M. Gheno, R.H.G.A. Kiminami, M.R. Morelli, P.I.P. Filho, Electric force microscopy investigations of barrier formations in ZnO-based varistors. J. Eur. Ceram. Soc. 30(2), 549–554 (2010)
122.
S. Hirose, K. Nishita, H. Niimi, Influence of distribution of additives on electrical potential barrier at grain boundaries in ZnO-based multilayered chip varistor. J. Appl. Phys. 100, 0837068 (2006)
123.
Z. Zhou, K. Kato, T. Komaki, M. Yoshino, H. Yukawa, M. Morinaga, K. Morita, Effects of dopants and hydrogen on the electrical conductivity of ZnO. J. Eur. Ceram. Soc. 24(1), 139–146 (2004)
124.
M.L. Arefin, F. Raether, D. Dolejs, A. Klimera, Phase formation during liquid phase sintering of ZnO ceramics. Ceram. Int. 35(8), 3313–3320 (2009)
125.
Z. Brankovic, G. Brankovic, S. Bernik, M. Zunic, ZnO varistors with reduced amount of additives prepared by direct mixing of constituent phases. J. Eur. Ceram. Soc. 27(2–3), 1101–1104 (2007)
126.
J. Clayton, H. Takamura, R. Metz, H.L. Tuller, B.J. Wuensch, The electrical and defect properties of Bi3Zn2Sb3O14 pyrochlore: a grain-boundary phase in ZnO-based varistors. J. Electroceram. 7(2), 113–120 (2001)
127.
M. L. Arefin, In-situ Measurements of the Liquid-Phase Sintering of Zinc Oxide, Doctoral Dissertation, University of Bayreuth, Germany, 2009
128.
M.L. Arefin, F. Raether, D. Dolejs, A. Klimera, Phase formation during liquid phase sintering of ZnO ceramics. Ceram. Int. 35, 3313–3320 (2009)
129.
D. Xu, X.N. Cheng, X.H. Yan, H.X. Xu, L.Y. Shi, Sintering process as relevant parameter for Bi2O3 vaporization from ZnO–Bi2O3-based varistor ceramics. Trans. Nonferr. Metals Soc. China 19, 1526–1532 (2009)
130.
M.H. Oh, K.J. Lee, I.J. Chung, N.Y. Lee, M.S. Kim, Fabrication method for high voltage zinc oxide varistor, U.S. Patent 5,004,573, 2 Apr 1991
131.
S. Li, F. Liu, Effects of sintering on formation of grain core and grain growth in ZnO varistor ceramics. J. Inorgan. Mater. 11(3), 476–482 (1996). (in Chinese)
132.
Y. Sato, T. Yamamoto, Y. Ikuhara, Atomic structures and electrical properties of ZnO grain boundaries. J. Am. Ceram. Soc. 90(2), 337–357 (2007)
133.
P.R. Bueno, E.R. Leite, M.M. Oliveira, M.O. Orlandi, E. Longo, Role of oxygen at the grain boundary of metal oxide varistors: a potential barrier formation mechanism. Appl. Phys. Lett. 79(1), 48–50 (2001)
134.
M. Takada, Y. Sato, S. Yoshikado, Relation between grain boundary structure and electrical degradation in zinc oxide varistors. J. Am. Ceram. Soc. 95(8), 2579–2586 (2012)
135.
X. Song, F. Liu, H. Zhang, Study on the developing process of grains in ZnO ceramics. J. Xi’an Jiaotong Univ. 30(6), 1–7 (1996). (in Chinese)
136.
X. Song, F. Liu, S. Li, Effects of sub-grain-boundaries on the characteristics of ZnO varistor ceramics. J Xi’an Jiaotong Univ. 29(3), 52–57 (1995). (in Chinese)
137.
S. Li, J. Li, F. Liu, M.A. Alim, G. Chen, The dimensional effect of breakdown field in ZnO varistors. J. Phys. D Appl. Phys. 35, 1884–1888 (2002)
138.
S. Li, J. Li, M.A. Alim, Structural origin of dimensional effect in ZnO varistors. J. Electroceram. 11(1–2), 119–124 (2003)
139.
P. Cheng, S. Li, J. Li, Dielectric loss of ZnO varistor ceramics by variable temperature spectroscopy. Acta Phys. Sin. 58(8), 5721–5725 (2009). (in Chinese)
140.
P. Cheng, S. Li, L. Zhang, J. Li, Characterization of intrinsic donor defects in ZnO ceramics by dielectric spectroscopy. Appl. Phys. Lett. 93, 012902 (2008)
141.
P. Cheng, S. Li, J. Li, Dielectric spectra of ZnO varistor ceramics. Acta Phys. Sin. 61(18), 187302 (2012). (in Chinese)
142.
S. Li, P. Cheng, L. Zhao, J. Li, Study of intrinsic defects in ZnO varistor ceramics by dielectric spectroscopy. Acta Phys. Sin. 58(1), 523–528 (2009). (in Chinese)
143.
P. Cheng, S. Li, J. Li, Application of dielectric spectroscopy in ZnO varistor ceramics. Adv. Mater. Res. 393–395, 24–27 (2012)
144.
P. Cheng, H. Wang, S. Li, Dielectric properties and relaxation mechanism of CaCu3Ti4O12 ceramics. Acta Phys. Sin. 62(5), 057701 (2013). (in Chinese)
145.
P. Cheng, S. Li, J. Li, Grain-boundary electronic structure of ZnO–Bi2O3 based varistor ceramics. Acta Phys. Sin. 59(1), 560–565 (2010). (in Chinese)
146.
K. Eda, M. Matsuoka, Thermally stimulated current in nonohmic ZnO ceramics. Jpn. J. Appl. Phys. 16(1), 195–196 (1977)
147.
B. Lakshminayanan, S. Akbar, C. Wang, M. Alim, An in-house built thermally stimulated current measurement set-up: strontium titanate as a test system. Jpn J. Appl. Phys. 39 Part1(8), 4830–4834 (1977)
148.
P. Cheng, Influences of Rare Earth Oxides on the Grain Boundary Structure and Electrical Properties of ZnO Varistors, Doctoral Dissertation (Xi’an Jiaotong University, Xi’an, P.R. China, 2007). (in Chinese)
149.
M. Inada, Microstructure of nonohmic zinc oxide ceramics. Jpn. J. Appl. Phys. 17(4), 673–677 (1978)
150.
W.D. Kingery, J.B. Sande, T. Mitamura, A scanning transmission electron microscopy investigation of grain boundary segregation in a ZnO–Bi2O3 varistor. J. Am. Ceram. Soc. 62(3–4), 221–222 (1979)
151.
H. Kanai, M. Imai, T. Takahashi, A high resolution transmission electron microscopy study of a zinc oxide varistor. J. Mater. Sci. 20, 3957–3966 (1985)
152.
F. Stucki, F. Greuter, Key role of oxygen at zinc oxide varistor grain boundaries. Appl. Phys. Lett. 57(5), 446–448 (1990)
153.
S. Fujitsu, H. Toyoda, K. Koumoto, H. Yanagida, M. Chikazawa, T. Kanazawa, Simultaneous measurement of electrical conductivity and the amount of adsorbed oxygen in porous ZnO. Bull. Chem. Soc. Jpn 61(6), 1979–1983 (1988)
154.
K.I. Hagemark, L.C. Chacka, Electrical transport properties of Zn-doped ZnO. J. Solid State Chem. 15, 261–270 (1975)
155.
J.P. Han, P.Q. Mantas, A.M.R. Senos, Defect chemistry and electrical characteristics of undoped and Mn-doped ZnO. J. Eur. Ceram. Soc. 22, 49–59 (2002)
156.
K. Eda, A. Iga, M. Matsuoka, Current creep in non-ohmic ZnO ceramics. Jpn. J. Appl. Phys. 18(5), 997–998 (1979)
157.
K. Eda, A. Iga, M. Matsuoka, Degradation mechanism of non-ohmic zinc oxide ceramics. J. Appl. Phys. 51(5), 2678–2684 (1980)
158.
T.K. Gupta, W.G. Carlson, P.L. Hower, Current instability phenomena in zno varistors under a continuous as stress. J. Appl. Phys. 52(6), 4104–4111 (1981)
159.
S. Hirose, H. Niimi, K. Kageyama, H. Ieki, T. Omata, S. Otsuka-Yao-Matsuo, Degradation of potential barriers in ZnO-based chip varistors due to electrostatic discharge. J. Appl. Phys. 112, 0337073 (2012)
160.
M. Takada, S. Yoshikado, Effect of thermal annealing on electrical degradation characteristics of Sb–Bi–Mn–Co-added ZnO varistors”. J. Eur. Ceram. Soc. 30(2), 531–538 (2010)
161.
T.K. Gupta, W.G. Carlson, A grain boundary defect model for instability/stability of a ZnO varistor. J. Mater. Sci. 20, 3487–3500 (1985)
162.
S. Li, F. Liu, X. Song, B. Xu, New idea of degradation mechanism of ZnO nonohmic ceramics. Proc. CSEE 13, 43–47 (1993). (in Chinese)
163.
R.W. Whatmore, Pyroelectric devices and materials. Rep. Prog. Phys. 49(12), 1335–1386 (1986)
164.
T.A. Perls, T.J. Diesel, W.I. Dobrov, Primary pyroelectricity in barium titanate ceramics. J. Appl. Phys. 29(9), 1297–1302 (1958)
165.
K.-H. Chew, F.G. Shin, B. Ploss, H.L.W. Chan, C.L. Choy, Primary and secondary pyroelectric effects of ferroelectric 0–3 composites. J. Appl. Phys. 94(2), 1134–1145 (2003)
166.
S. Li, F. Liu, H. Jin, High-temperature pyroelectricity of ZnO varistor ceramics. Chin. J. Mater. Res. 10(2), 170–174 (1996). (in Chinese)
167.
M. Takada, Y. Sato, S. Yoshikado, Effect of heat treatment on tolerance characteristic for electrical degradation of ZnO varistors with added Sb2O3. Electr. Eng. Jpn 179(2), 1–10 (2012)
168.
M. Takada, Y. Sato, S. Yoshikado, Effect of heat treatment on tolerance characteristic for electrical degradation of Sb2O3-Added ZnO varistors. IEEJ Trans. Fundam. Mater. 129(4), 327–334 (2009)
169.
M. Kakazey, M. Vlasova, M. Dominguez-Patino, J. Kliava, T. Tomila, Solid-state reactivity of the ZnO–xMn2O3 system during heat treatment. J. Am. Ceram. Soc. 89(4), 1458–1460 (2006)
170.
M.A. Ramirez, A.Z. Simoes, P.R. Bueno, M.A. Marquez, M.O. Orlandi, J.A. Varela, Importance of oxygen atmosphere to recover the ZnO-based varistors properties. J. Mater. Sci. 41(19), 6221–6227 (2006)
171.
M.A. Alim, Passivating coating for metal oxide varistors: processing and applications, U.S. Patent 5,307,046, 26 Apr 1994
172.
M.A. Alim, Passivating coating for metal oxide varistors: processing and applications, U.S. Patent 5,203,915, 20 Apr 1993
173.
A. Rohatgi, S.K. Pang, T.K. Gupta, W.D. Straub, The deep level transient spectroscopy studies of varistors as a function of annealing. J. Appl. Phys. 63, 5375–5379 (1988)
174.
T.K. Gupta, W.D. Straub, Effect of annealing on the ac leakage components of ZnO varistor, I. resistive current. J. Appl. Phys. 68(2), 845–850 (1990)
175.
T.K. Gupta, W.D. Straub, Effect of annealing on the ac leakage components of ZnO varistor, II. capacitive current. J. Appl. Phys. 68(2), 851–855 (1990)
176.
T.K. Gupta, W.G. Carlson, A grain-boundary defect model for instability/stability of a ZnO varistor. J. Mater. Sci. 20, 3487–3500 (1985)
177.
L.M. Levinson, H.R. Philipp, Zinc oxide varistors—a review. Am. Ceram. Soc. Bull. 65(4), 639–646 (1986)
178.
Z. Wang, S. Li, Manufacturing and Application of ZnO Varistors (Science Press, Xi’an, 2009). (in Chinese)
179.
Y. Wang, S. Li, M. Zhang, P. Cheng, Y. Lin, M.A. Alim, Improvement of energy-handling capability of the ZnO varistors prepared by fractional precipitation on the seed materials. J. Mater. Sci.: Mater. Electron. 18, 495–503 (2007)
180.
M.H. Oh, K.J. Lee, I.J. Chung, N.Y. Lee, M.S. Kim, Fabrication method for high voltage zinc oxide varistor, U.S. Patent 5,004,573, 02 Apr 1991
181.
W. Hume-Rothery, Electrons, Atoms, Metals and Alloys, 3rd edn. (Dover Publications, New York, 1963)
182.
A.G. Guy, Introduction to Materials Science (McGraw-Hill Book Company, New York, 1972)
183.
K.-I. Kobayashi, T. Katu, Y. Takada, O. Wada, M. Kobayashi, N. Furuse, Y. Fujiwara, S. Shichimiya, S. Ishibe, Voltage-dependent non-linear resistor member, method for producing the same and arrester, U.S. Patent 6,011,459, 4 Jan 2000
184.
Y. Sato, F. Oba, M. Yodogawa, T. Yamamoto, Y. Ikuhara, Grain boundary dependency of nonlinear current-voltage characteristics in pr and co doped ZnO bicrystals. J. Appl. Phys. 95(3), 1258–1264 (2004)
185.
A. Izoulet, S. Guillemet-Fritsch, C. Estournes, J. Morel, Microstructure control to reduce leakage current of medium and high voltage ceramic varistors based on doped ZnO. J. Eur. Ceram. Soc. 34(15), 3707–3714 (2014)
186.
J. He, J. Liu, J. Hu, W. Long, AC ageing characteristics of Y2O3-doped ZnO varistors with high voltage gradient. Mater. Lett. 65(17–18), 2595–2597 (2011)
187.
P. Cheng, S. Li, M.A. Alim, Soft core behavior in ZnO–Bi2O3-based varistors containing oxides of Ce and Gd. Phys. Status Solidi (a) 204(3), 887–899 (2007)
188.
S.A. Shojaee, M.M. Shahraki, M.A.F. Sani, A. Nemati, A. Yousef, Microstructural and electrical properties of varistors prepared from coated ZnO nanopowders. J. Mater. Sci.: Mater. Electron. 21, 571–577 (2010)
189.
H. Zhou, R. Guo, D. Chu, B. Chang, Y. Qin, L. Fang, Bi4Ti3O12 modified low voltage ZnO-based varistors: microstructure, electrical properties and aging characteristics. J. Mater. Sci.: Mater. Electron. 24, 4987–4992 (2013)
190.
K.V. Mahesh, S. Anas, S. Rahul, S. Ananthakumar, Effect of two-step sintering on rare earth (RE 5Y2O3, Pr6O11) doped ZnO–Bi2O3 varistors processed from ‘nano-precursor’ powders. J. Mater. Sci.: Mater. Electron. 24, 1495–1504 (2013)
191.
J. Wu, T. Qi, T.T. Li, Q.W. Qin, G.Q. Li, B.L. Zhu, Z.D. Xiang, C.S. Xie, The AC impedance and variable temperature dielectric spectroscopic analysis of MnO2 doped and un-doped ZnO–V2O5 ceramics. J. Mater. Sci.: Mater. Electron. 23, 1143–1150 (2012)
192.
J. Zhu, G. Qi, H. Yang, F. Wang, Microstructure and electrical properties of Pr6O11 Doped ZnO–Bi2O3-based varistors. J. Mater. Sci.: Mater. Electron. 22, 96–100 (2011)
Metadata
Title
Advances in ZnO–Bi2O3 based varistors
Authors
Jianying Li
Shengtao Li
Pengfei Cheng
Mohammad A. Alim
Publication date
01-07-2015
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 7/2015
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-015-3093-1

Other articles of this Issue 7/2015

Journal of Materials Science: Materials in Electronics 7/2015 Go to the issue

OriginalPaper

Plasmonic bulk heterojunction photovoltaic devices based on poly (9-vinylcarbazole)/gold nanocomposites: effect of aspect ratio of gold nanorod

OriginalPaper

Synthesis and study of structural, magnetic and microwave absorption properties in multiferroic BiFeO3 electroceramic

OriginalPaper

Synthesis and luminescent properties of subglobose YBO3:Ln3+(Eu, Tb) phosphors

OriginalPaper

Progress in development of copper antimony sulfide thin films as an alternative material for solar energy harvesting

OriginalPaper

Preparation and photovoltaic properties of silicon quantum dots embedded in a dielectric matrix: a review

OriginalPaper

Structural and optical investigation of Cd4Se96−xSx (x = 4, 8, 12) chalcogenide thin films