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Journal of Materials Science: Materials in Electronics

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01-07-2015

Preparation and photovoltaic properties of silicon quantum dots embedded in a dielectric matrix: a review

Authors: Xiaobo Chen, Peizhi Yang

Published in: Journal of Materials Science: Materials in Electronics | Issue 7/2015

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Abstract

Over the last few years silicon quantum dots (Si QDs) have come under intensive research because of their interesting physical properties and their potential use in future electronic and optoelectronic applications. Focusing on photovoltaic applications, we review recent progress in silicide-embedded Si QDs films with different fabrication techniques and different characteristics. Some avenues for further material improvements are discussed. The performances of several photovoltaic devices reported in the literature are also reviewed and discussed. We assess the state of the art in the area of Si QDs layer deposition, including fabrication technologies and film properties, and highlight the challenges that need to be overcome. Finally, some existing problems and future work are pointed out.

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Title: Preparation and photovoltaic properties of silicon quantum dots embedded in a dielectric matrix: a review
Authors: Xiaobo Chen
Peizhi Yang
Publication date: 01-07-2015
Publisher: Springer US
Published in: Journal of Materials Science: Materials in Electronics / Issue 7/2015
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI: https://doi.org/10.1007/s10854-015-3147-4

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