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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 7/2015

01-07-2015

Selective epitaxy growth of Si1−xGex layers for MOSFETs and FinFETs

Authors: Henry H. Radamson, Mohammadreza Kolahdouz

Published in: Journal of Materials Science: Materials in Electronics | Issue 7/2015

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Abstract

This article reviews the selective epitaxy growth of intrinsic, B- and C-doped SiGe layers on recessed (or flat) exposed Si areas for MOSFETs as well as on Si-fins for FinFETs. A detailed empirical model for the growth, integration issues including epitaxy quality, selectivity, dopant incorporation, and pattern dependency (or loading effect) is presented.
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Metadata
Title
Selective epitaxy growth of Si1−xGex layers for MOSFETs and FinFETs
Authors
Henry H. Radamson
Mohammadreza Kolahdouz
Publication date
01-07-2015
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 7/2015
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-015-3123-z

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