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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 7/2015

01.07.2015

Advances in ZnO–Bi2O3 based varistors

verfasst von: Jianying Li, Shengtao Li, Pengfei Cheng, Mohammad A. Alim

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 7/2015

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Abstract

In this review paper detailed development of the ZnO–Bi2O3 based polycrystalline varistors are presented as the technological importance emerged with the rapid applications of the gapless surge protectors superseding traditional gapped SiC designs. The excellent symmetric nonlinear current–voltage (I–V) characteristic of these varistors results from the type of back-to-back electrical potential barriers that are formed between the successive ZnO grains during the step-wise processing cycles. The role of microstructures and the defect structures in conjunction with the processing parameters paved the road to the understanding of the degradation and failure mechanisms of the electrical potential barriers for acceptable protective characteristics. The nature of the processing variables influencing eventual performance of varistors is discussed.
Vorheriger Artikel Progress in development of copper antimony sulfide thin films as an alternative material for solar energy harvesting
Nächster Artikel Plasma treated graphene oxide films: structural and electrical studies

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Metadaten
Titel
Advances in ZnO–Bi2O3 based varistors
verfasst von
Jianying Li
Shengtao Li
Pengfei Cheng
Mohammad A. Alim
Publikationsdatum
01.07.2015
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 7/2015
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-015-3093-1

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