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Published in: Journal of Materials Science: Materials in Electronics 7/2013

01-07-2013

Effect of Ca doping on enhancement of ferroelectricity and magnetism in HoMnO3 multiferroic system

Authors: P. P. Rout, B. K. Roul

Published in: Journal of Materials Science: Materials in Electronics | Issue 7/2013

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Abstract

This paper reports an alternative approach to achieve orthorhombic HoMnO3 (HMO) structure by Ca doping at Holmium site. It is observed that pure HMO undergoes hexagonal (P6 3 cm) to orthorhombic (Pbnm) structural transformation when Ca is substituted at Ho site through high temperature sintering at 1,450 °C for 10 h. With the substitution of Ca in HMO (Ho1−xCaxMnO3, x = 0.05), hexagonal unit cell volume has been contracted significantly. However with further increase of Ca dopant concentration (x = 0.1, 0.2), unit cell volume for each composition are marginally enhanced. Spontaneous polarization (Ps), remanent polarization (Pr) values are observed to be enhanced up to the limiting doping value for x = 0.1. Further substitution of Ca in HMO (x > 0.2) reduces the Ps and Pr value marginally. Similarly dielectric constant (εr) and dielectric loss values are increased up to x = 0.1 and then decreased up to x = 0.2. These observations are expected to be linked with the structural and microstructural changes with the variation of x. At x = 0.1, larger grains are developed, with enhanced value of polarization and dielectric constant. In addition to above mentioned enhanced ferroelectric polarization and dielectric behaviour, we have observed peculiar magnetic property from M to H curve. In all Ho1−xCaxMnO3 (x = 0–0.2) samples, a switching behaviour in low field was observed in field dependence of magnetization at room temperature and the behaviour found to be enhanced with Ca concentration up to 0.1 and then decreases.

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Metadata
Title
Effect of Ca doping on enhancement of ferroelectricity and magnetism in HoMnO3 multiferroic system
Authors
P. P. Rout
B. K. Roul
Publication date
01-07-2013
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 7/2013
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-013-1123-4

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