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Published in:
01-07-2015
Effect of hydrogen-ion energy on structure of a-Si:H thin films prepared by ion-beam-assisted sputtering
Published in: Journal of Materials Science: Materials in Electronics | Issue 7/2015
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Abstract
In this work, hydrogenated amorphous silicon (a-Si:H) thin films were prepared by ion-beam-assisted sputtering, and the effect of hydrogen-ion energy on the structure of a-Si:H thin films were investigated using Raman spectroscopy, Fourier transform infrared spectroscopy, and spectroscopic ellipsometry. It was observed that the network structure order and defect density of states of a-Si:H films were improved with the introduction of assisted-hydrogen-ion-beam, and that of a-Si:H thin films with moderate hydrogen-ion energy of 200 eV was optimal. The a-Si:H thin films with hydrogen-ion energy of 200 eV possessed the atomic hydrogen concentration, absorption coefficient at 0.8 eV and microstructure factor of 10.2 %, 0.7 cm−1 and 0.48, respectively. It was indicated that ion-beam-assisted sputtering was an alternative way to prepare device-quality a-Si:H thin films.