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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 2/2017

09-09-2016

Effect of manganese concentration on physical properties of ZnS:Mn thin films prepared by chemical bath deposition

Authors: Abdelhak Jrad, Wafa Naffouti, Tarek Ben Nasr, Souad Ammar, Najoua Turki-Kamoun

Published in: Journal of Materials Science: Materials in Electronics | Issue 2/2017

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Abstract

ZnS:Mn thin films were grown by chemical bath deposition technique on glass substrates for different doping ratios y = [Mn2+]/[Zn2+] (y = 0, 6, 12 and 18 at. %). Structural, morphological, optical and electrical properties were studied by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), UV–Vis–NIR spectrophotometry, spectrofluorimetry, Hall effect measurement. In fact, the XRD analysis showed that ZnS:Mn films were poorly crystalline. The average transmittance of all films was greater than 70 % in the visible range. The effect of Mn doping on refractive index, extinction coefficient and other optical parameters was also investigated. Measured electrical resistivity decreased slightly from 7.586 × 104 to 6.819 × 104 Ω cm with increasing of doping concentration from 0 to 6 at. % then it increased again to achieve 16.73 × 104 Ω cm for \(y\) equals to 18 at. %.
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Metadata
Title
Effect of manganese concentration on physical properties of ZnS:Mn thin films prepared by chemical bath deposition
Authors
Abdelhak Jrad
Wafa Naffouti
Tarek Ben Nasr
Souad Ammar
Najoua Turki-Kamoun
Publication date
09-09-2016
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 2/2017
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-016-5682-z

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