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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 2/2016

10-10-2015

Effects of Al2O3 additive on sintering behavior and microwave dielectric properties of ZnTa2O6 ceramics

Authors: Wang-Suo Xia, Fei Jin, Mei Wang, Xin Wang, Guo-Ying Zhang, Li-Wei Shi

Published in: Journal of Materials Science: Materials in Electronics | Issue 2/2016

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Abstract

ZnTa2O6 ceramics with various amount of Al2O3 additive were synthesized by a conventional mixed-oxide route. The grain growth of ZnTa2O6 ceramics was accelerated with Al2O3 additive. However, excessive addition (>1.0 wt%) of Al2O3 leaded to abnormal grain growth. With Al2O3 addition, the Al2O3 additive did not solubilized into ZnTa2O6 structure but resulted in forming the second phase. The Al2O3 addition resulted in the lower sintering temperature of ZnTa2O6 ceramics and improved microwave dielectric properties. The dielectric constant (εr) of the samples did not change much and ranged from 32.41 to 34.33 with different amount of Al2O3 addition. The optimized quality factor (Q × f) was higher than 70,000 GHz as a result of the denser ceramics. The temperature coefficient of resonant frequency (τ f ) of the doped ZnTa2O6 ceramics could be optimized to near-zero.
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Metadata
Title
Effects of Al2O3 additive on sintering behavior and microwave dielectric properties of ZnTa2O6 ceramics
Authors
Wang-Suo Xia
Fei Jin
Mei Wang
Xin Wang
Guo-Ying Zhang
Li-Wei Shi
Publication date
10-10-2015
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 2/2016
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-015-3857-7

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