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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 10/2015

01-10-2015

Effects of Cr2O3 doping on the microstructural and electrical properties of ZnO–Bi2O3 based varistor films

Authors: D. Xu, K. He, B. H. Chen, S. Y. Mu, W. H. Wu, L. Jiao, X. J. Sun, Y. T. Yang

Published in: Journal of Materials Science: Materials in Electronics | Issue 10/2015

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Abstract

Doping of Bi2O3 has been considered to be the essential condition for ZnO varistors. But there have always been found that Bi2O3 second phases concentrated at grain boundaries will have great effects on electrical properties. We find that the Cr2O3 doping has positive effects on the substitution of Bi3+ into the lattice of ZnO varistor films. With the Cr2O3 doping, the XRD peak intensity of Bi2O3 second phase decreased. And the Bi2O3 peak disappears when the content of the Cr reached 0.3 mol%. Meanwhile, the lattice parameter increases with the Cr2O3 doping. We think those may be caused by the promoted lattice entering of Bi3+ through Cr2O3 doping. The dielectric and varistor properties of ZnO varistor films were greatly improved by Cr2O3 doping. The obvious effects of Cr2O3 doping on the microstructure and electrical properties suggest good candidate of Cr2O3 as the dopant for ZnO–Bi2O3 based varistor films.
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Metadata
Title
Effects of Cr2O3 doping on the microstructural and electrical properties of ZnO–Bi2O3 based varistor films
Authors
D. Xu
K. He
B. H. Chen
S. Y. Mu
W. H. Wu
L. Jiao
X. J. Sun
Y. T. Yang
Publication date
01-10-2015
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 10/2015
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-015-3443-z

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