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Journal of Electronic Materials
Published in: Journal of Electronic Materials 11/2006

01-11-2006 | Regular Issue Paper

Effects of Cu and Pd addition on Au bonding wire/Al pad interfacial reactions and bond reliability

Authors: Sang-Ah Gam, Hyoung-Joon Kim, Jong-Soo Cho, Yong-Jin Park, Jeong-Tak Moon, Kyung-Wook Paik

Published in: Journal of Electronic Materials | Issue 11/2006

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previous article Effect of glass frit chemistry on the physical and electrical properties of thick-film Ag contacts for silicon solar cells
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Metadata
Title
Effects of Cu and Pd addition on Au bonding wire/Al pad interfacial reactions and bond reliability
Authors
Sang-Ah Gam
Hyoung-Joon Kim
Jong-Soo Cho
Yong-Jin Park
Jeong-Tak Moon
Kyung-Wook Paik
Publication date
01-11-2006
Publisher
Springer-Verlag
Published in
Journal of Electronic Materials / Issue 11/2006
Print ISSN: 0361-5235
Electronic ISSN: 1543-186X
DOI
https://doi.org/10.1007/s11664-006-0312-9

Other articles of this Issue 11/2006

Journal of Electronic Materials 11/2006 Go to the issue

Special Issue Paper

Electromigration effects on intermetallic growth at wire-bond interfaces

Regular Issue Paper

Effect of settlement on dense slurry flow in a horizontal channel

Special Issue Paper

Thermal stability of Cu(W) and Cu(Mo) films for advanced barrierless Cu metallization: Effects of annealing time

Regular Issue Paper

Thermally stable Ge/Cu/Ti ohmic contacts to n-type GaN

Special Issue Paper

in-situ electromigration study on Sn−Ag−Cu solder joint by digital image speckle analysis

Regular Issue Paper

Realization of very long wavelength infrared photovoltaic detector arrays on mercury cadmium telluride epitaxial layers grown on Si substrates