Advertisement
Published in:
01-04-2021 | Cover Story
"Efficiency levels over 98 % are essential"
Published in: ATZelectronics worldwide | Issue 4/2021
Log inActivate our intelligent search to find suitable subject content or patents.
Select sections of text to find matching patents with Artificial Intelligence. powered by
Select sections of text to find additional relevant content using AI-assisted search. powered by
Excerpt
The progress being made with power semiconductors is lending electric mobility more range. According to Mark Münzer, Vice President Innovation & Emerging Technologies SiC/GaN in the Automotive Division of Infineon Technologies, it is wide-bandgap-based power semiconductors in particular, efficiently represented by SiC components, that offer enormous advantages. He explains in the interview with ATZelectronics how range could be extended by up to 12 % by moving from the latest IGBT technology to second-generation CoolSiC with the same complement of batteries.
Mark Münzer is Vice President Innovation & Emerging Technologies and in this role responsible for high power switches based on SiC/GaN in the automotive sector of Infineon Technologies. He has worked on increasing the efficiency of semiconductors at Eupec/Infineon since completing his electrical and electronic degree at the University RWTH Aachen 23 years ago.
© Infineon
× ![]()
…