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01-04-2021 | Cover Story

Optimizing the Internal Structure and Control of Power Semiconductor Modules

Authors: Pierre Calmes, Tobias Keller, Daniel Schneider

Published in: ATZelectronics worldwide | Issue 4/2021

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Excerpt

The use of the semiconductor material silicon carbide in power semiconductors for traction inverters demands optimal control by novel gate units and as well electromagnetic design. Furthermore, the efficiency gains offered by very low-loss SiC semiconductors can only be achieved with good thermal design that allows an ideal current distribution within the modules, as Hitachi ABB Power Grids und NXP show. …

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Metadata
Title
Optimizing the Internal Structure and Control of Power Semiconductor Modules
Authors
Pierre Calmes
Tobias Keller
Daniel Schneider
Publication date
01-04-2021
Publisher
Springer Fachmedien Wiesbaden
Published in
ATZelectronics worldwide / Issue 4/2021
Electronic ISSN: 2524-8804
DOI
https://doi.org/10.1007/s38314-021-0592-0

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