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Semiconductors
Published in: Semiconductors 5/2006

01-05-2006 | Semiconductor Structures, Interfaces, and Surfaces

Electrical characteristics of the ITO/HgInTe photodiodes

Authors: L. A. Kosyachenko, I. M. Rarenko, E. F. Sklyarchuk, I. I. German, Sun Weiguo

Published in: Semiconductors | Issue 5/2006

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previous article Estimates of the exciton transition energy in NH/3C/NH (N = 2, 4, 6, 8) heterostructures based on silicon carbide polytypes
next article Studies of physical phenomena in semiconductor nanostructures using samples with laterally nonuniform layers. Photoluminescence of structures with n-type δ-doped layers

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Metadata
Title
Electrical characteristics of the ITO/HgInTe photodiodes
Authors
L. A. Kosyachenko
I. M. Rarenko
E. F. Sklyarchuk
I. I. German
Sun Weiguo
Publication date
01-05-2006
Publisher
Nauka/Interperiodica
Published in
Semiconductors / Issue 5/2006
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782606050083

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