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Semiconductors
Published in: Semiconductors 5/2006

01-05-2006 | Semiconductor Structures, Interfaces, and Surfaces

Transformation of electrically active defects as a result of annealing of silicon implanted with high-energy ions

Authors: I. V. Antonova, S. S. Shaĭmeev, S. A. Smagulova

Published in: Semiconductors | Issue 5/2006

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previous article Scattering of holes by the GaAs/AlAs (111) and (110) interfaces
next article Estimates of the exciton transition energy in NH/3C/NH (N = 2, 4, 6, 8) heterostructures based on silicon carbide polytypes

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Metadata
Title
Transformation of electrically active defects as a result of annealing of silicon implanted with high-energy ions
Authors
I. V. Antonova
S. S. Shaĭmeev
S. A. Smagulova
Publication date
01-05-2006
Publisher
Nauka/Interperiodica
Published in
Semiconductors / Issue 5/2006
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S106378260605006X

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Estimates of the exciton transition energy in NH/3C/NH (N = 2, 4, 6, 8) heterostructures based on silicon carbide polytypes

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Scattering of holes by the GaAs/AlAs (111) and (110) interfaces

Low-Dimensional Systems

Effect of external electric field on the probability of optical transitions in InGaAs/GaAs quantum wells

Physics of Semiconductor Devices

High-power laser diodes (λ = 808–850 nm) based on asymmetric separate-confinement heterostructures

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