Issue 5/2006
Content (18 Articles)
Influence of pyrolysis conditions of aqueous solution aerosol of thiocarbamide complexes on the microwave photoconductivity of cadmium sulfide films
N. L. Sermakasheva, Yu. M. Shul’ga, Yu. V. Meteleva, G. F. Novikov
Magnetotransport properties of type II heterojunctions based on GaInAsSb/InAs and GaInAsSb/GaSb
T. I. Voronina, T. S. Lagunova, M. P. Mikhaĭlova, K. D. Moiseev, A. F. Lipaev, Yu. P. Yakovlev
On metal-insulator electronic phase transitions in semiconductors
M. I. Daunov, I. K. Kamilov, S. F. Gabibov
Exciton-polariton transition induced by elastic exciton-exciton collisions in ultrahigh quality AIGaAs alloys
T. S. Shamirzaev, A. I. Toropov, A. K. Bakarov, K. S. Zhuravlev, A. Yu. Kobitski, H. P. Wagner, D. R. T. Zahn
Scattering of holes by the GaAs/AlAs (111) and (110) interfaces
G. F. Karavaev, V. N. Chernyshov
Transformation of electrically active defects as a result of annealing of silicon implanted with high-energy ions
I. V. Antonova, S. S. Shaĭmeev, S. A. Smagulova
Estimates of the exciton transition energy in NH/3C/NH (N = 2, 4, 6, 8) heterostructures based on silicon carbide polytypes
S. Yu. Davydov, A. A. Lebedev, O. V. Posrednik
Electrical characteristics of the ITO/HgInTe photodiodes
L. A. Kosyachenko, I. M. Rarenko, E. F. Sklyarchuk, I. I. German, Sun Weiguo
Studies of physical phenomena in semiconductor nanostructures using samples with laterally nonuniform layers. Photoluminescence of structures with n-type δ-doped layers
Yu. V. Khabarov, V. V. Kapaev, V. A. Petrov, G. B. Galiev
Tunneling recombination in spatially inhomogeneous structures
N. S. Grushko, E. A. Loginova, L. N. Potanakhina
The study of lateral carrier transport in structures with InGaN quantum dots in the active region
V. S. Sizov, D. S. Sizov, G. A. Mikhailovskiĭ, E. E. Zavarin, V. V. Lundin, A. F. Tsatsul’nikov, N. N. Ledentsov
Spectrum of an electron in a quantum well in high inclined magnetic field and high transverse electric field
M. P. Telenkov, Yu. A. Mityagin
The effect of misorientation of the GaAs substrate on the properties of InAs quantum dots grown by low-temperature molecular beam epitaxy
A. A. Tonkikh, G. E. Cirlin, N. K. Polyakov, Yu. B. Samsonenko, V. M. Ustinov, N. D. Zakharov, P. Werner, V. G. Talalaev, B. V. Novikov
Effect of external electric field on the probability of optical transitions in InGaAs/GaAs quantum wells
A. N. Pikhtin, O. S. Komkov, K. V. Bazarov
The effect of oxidation on the efficiency and spectrum of photoluminescence of porous silicon
B. M. Bulakh, N. E. Korsunska, L. Yu. Khomenkova, T. R. Staraya, M. K. Sheĭnkman
Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs
A. A. Efremov, N. I. Bochkareva, R. I. Gorbunov, D. A. Lavrinovich, Yu. T. Rebane, D. V. Tarkhin, Yu. G. Shreter
High-power laser diodes (λ = 808–850 nm) based on asymmetric separate-confinement heterostructures
A. Yu. Andreev, A. Yu. Leshko, A. V. Lyutetskiĭ, A. A. Marmalyuk, T. A. Nalyot, A. A. Padalitsa, N. A. Pikhtin, D. R. Sabitov, V. A. Simakov, S. O. Slipchenko, M. A. Khomylev, I. S. Tarasov
VCSELs based on arrays of sub-monolayer InGaAs quantum dots
S. A. Blokhin, N. A. Maleev, A. G. Kuz’menkov, Yu. M. Shernyakov, I. I. Novikov, N. Yu. Gordeev, V. V. Dyudelev, G. S. Sokolovskiĭ, V. I. Kuchinskiĭ, M. M. Kulagina, M. V. Maximov, V. M. Ustinov, A. R. Kovsh, S. S. Mikhrin, N. N. Ledentsov