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Semiconductors
Published in: Semiconductors 5/2006

01-05-2006 | Physics of Semiconductor Devices

Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs

Authors: A. A. Efremov, N. I. Bochkareva, R. I. Gorbunov, D. A. Lavrinovich, Yu. T. Rebane, D. V. Tarkhin, Yu. G. Shreter

Published in: Semiconductors | Issue 5/2006

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Metadata
Title
Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs
Authors
A. A. Efremov
N. I. Bochkareva
R. I. Gorbunov
D. A. Lavrinovich
Yu. T. Rebane
D. V. Tarkhin
Yu. G. Shreter
Publication date
01-05-2006
Publisher
Nauka/Interperiodica
Published in
Semiconductors / Issue 5/2006
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782606050162

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Transformation of electrically active defects as a result of annealing of silicon implanted with high-energy ions

Electronic and Optical Properties of Semiconductors

On metal-insulator electronic phase transitions in semiconductors

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