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Journal of Materials Science

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15-03-2018 | Electronic materials

Enhanced metal–insulator transition in V₂O₃ by thermal quenching after growth

Authors: J. Trastoy, Y. Kalcheim, J. del Valle, I. Valmianski, Ivan K. Schuller

Published in: Journal of Materials Science | Issue 12/2018

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Abstract

The properties of oxides are critically controlled by the oxygen stoichiometry. Minimal variations in oxygen content can lead to vast changes in their properties. The addition of oxygen during synthesis may not be a precise enough knob for tuning the oxygen stoichiometry when the material has several stable and close oxidation states. We use sputtered V₂O₃ films as an example to show that rapid transfer of the sample away from the heating element after growth causes a temperature decrease (quenching) quick enough to freeze the correct oxygen stoichiometry in the sample. This procedure has allowed us to improve dramatically the V₂O₃ electronic properties without any adverse measurable effects on the structural properties. In this fashion, the metal–insulator transition resistance change was increased by two orders of magnitude, while the transition width was decreased by 20 K.

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Title: Enhanced metal–insulator transition in V2O3 by thermal quenching after growth
Authors: J. Trastoy
Y. Kalcheim
J. del Valle
I. Valmianski
Ivan K. Schuller
Publication date: 15-03-2018
Publisher: Springer US
Published in: Journal of Materials Science / Issue 12/2018
Print ISSN: 0022-2461
Electronic ISSN: 1573-4803
DOI: https://doi.org/10.1007/s10853-018-2214-7

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