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Published in:
25-10-2018
Enhanced photoelectrochemical performance of black Si electrode by forming a pn junction
Published in: Journal of Materials Science: Materials in Electronics | Issue 24/2018
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Abstract
A pn junction based on the black Si wafer has been prepared for the photoelectrochemical (PEC) applications by a facile chemical etching method combined with thermal diffusion process. And also in this work, a black Si wafer were fabricated by using a commercial multicrystaline Si (mc-Si) wafer as the raw. It was demonstrated that pn junction was beneficial to enhance the PEC performance of a Si photoanode. The mechanism was further clarified by an electrochemical impedance analysis. The improved PEC activity was attributed to a more efficient charge separation inside the solid electrode. Besides, the p-type Si wafer displayed a characteristic of n-type semiconductor, which was explained through a simple energy band model.