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Microsystem Technologies

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18-08-2023 | Technical Paper

Extraction of non-quasi-static model parameters for cylindrical gate-stacked junction-less accumulation mode MOSFET and its implementation as RF filters for circuit applications

Authors: Jitender Kumar, Aparna N. Mahajan, S. S. Deswal, Amit Saxena, R. S. Gupta

Published in: Microsystem Technologies | Issue 10/2023

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Abstract

The small signal model of MOSFET is a must for implementation of analog/digital circuits. The non-quasi-static (NQS) model is well known and provides accurate parameters for MOSFET. In the present work, extrinsic and intrinsic NQS model parameters were extracted for 20 nm Gate Stacked Junction-less Accumulation Mode (GSJAM) MOSFET using two-port admittance parameters. Further, for analog/RF applications, the first order active high pass filter (HPF), low pass filter (LPF) and second order active HPF, LPF are implemented using 20 nm GSJAM MOSFET. The first order and second order active filters are implemented for 10 GHz circuit applications. For amplifying the processed filtered input signal, a CMOS single stage common source voltage amplifier is used in the output circuit. Filter circuits use GSJAM N-type MOSFET as an active load in conjunction with a passive capacitor. With cut-off frequency, further bode-plot analysis of the low pass filter and high pass filter circuits is conducted. For numerical simulation, the well-known silvaco CAD tool is used.

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Title: Extraction of non-quasi-static model parameters for cylindrical gate-stacked junction-less accumulation mode MOSFET and its implementation as RF filters for circuit applications
Authors: Jitender Kumar
Aparna N. Mahajan
S. S. Deswal
Amit Saxena
R. S. Gupta
Publication date: 18-08-2023
Publisher: Springer Berlin Heidelberg
Published in: Microsystem Technologies / Issue 10/2023
Print ISSN: 0946-7076
Electronic ISSN: 1432-1858
DOI: https://doi.org/10.1007/s00542-023-05524-8

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